IXGH17N100价格

参考价格:¥31.1618

型号:IXGH17N100 品牌:IXYS 备注:这里有IXGH17N100多少钱,2025年最近7天走势,今日出价,今日竞价,IXGH17N100批发/采购报价,IXGH17N100行情走势销售排行榜,IXGH17N100报价。
型号 功能描述 生产厂家&企业 LOGO 操作
IXGH17N100

Low VCE(sat) IGBT, High speed IGBT

Features ● International standard packages ● 2nd generation HDMOSTM process ● Low VCE(sat) - for low on-state conduction losses ● High current handling capability ● MOS Gate turn-on - drive simplicity ● Voltage rating guaranteed at high temperature (125°C) Applications ● AC

IXYS

艾赛斯

IXGH17N100

Low V IGBT High speed IGBT

Features ● International standard packages ● 2nd generation HDMOSTM process ● Low VCE(sat) - for low on-state conduction losses ● High current handling capability ● MOS Gate turn-on - drive simplicity ● Voltage rating guaranteed at high temperature (125°C) Applications ● AC

IXYS

艾赛斯

IXGH17N100

封装/外壳:TO-247-3 包装:管件 描述:IGBT 1000V 34A 150W TO247AD 分立半导体产品 晶体管 - UGBT、MOSFET - 单

IXYS

艾赛斯

Low V IGBT High speed IGBT

Features ● International standard packages ● 2nd generation HDMOSTM process ● Low VCE(sat) - for low on-state conduction losses ● High current handling capability ● MOS Gate turn-on - drive simplicity ● Voltage rating guaranteed at high temperature (125°C) Applications ● AC

IXYS

艾赛斯

Low VCE(sat) IGBT, High speed IGBT

Features ● International standard packages ● 2nd generation HDMOSTM process ● Low VCE(sat) - for low on-state conduction losses ● High current handling capability ● MOS Gate turn-on - drive simplicity ● Voltage rating guaranteed at high temperature (125°C) Applications ● AC

IXYS

艾赛斯

Low VCE(sat) IGBT with Diode High speed IGBT with Diode

Features • International standard package JEDEC TO-247 AD • IGBT and anti-parallel FRED in one package • 2nd generation HDMOSTM process • Low VCE(sat) - for minimum on-state conduction losses • MOS Gate turn-on - drive simplicity • Fast Recovery Epitaxial Diode (FRED)

IXYS

艾赛斯

Low VCE(sat) IGBT with Diode High speed IGBT with Diode

Features • International standard package JEDEC TO-247 AD • IGBT and anti-parallel FRED in one package • 2nd generation HDMOSTM process • Low VCE(sat) - for minimum on-state conduction losses • MOS Gate turn-on - drive simplicity • Fast Recovery Epitaxial Diode (FRED)

IXYS

艾赛斯

封装/外壳:TO-247-3 包装:卷带(TR) 描述:IGBT 1000V 34A 150W TO247AD 分立半导体产品 晶体管 - UGBT、MOSFET - 单

IXYS

艾赛斯

Low VCE(sat) IGBT, High speed IGBT

Features ● International standard packages ● 2nd generation HDMOSTM process ● Low VCE(sat) - for low on-state conduction losses ● High current handling capability ● MOS Gate turn-on - drive simplicity ● Voltage rating guaranteed at high temperature (125°C) Applications ● AC

IXYS

艾赛斯

IXGH17N100产品属性

  • 类型

    描述

  • 型号

    IXGH17N100

  • 功能描述

    IGBT 晶体管 17 Amps 1000V 4 Rds

  • RoHS

  • 制造商

    Fairchild Semiconductor

  • 配置

    集电极—发射极最大电压

  • VCEO

    650 V

  • 集电极—射极饱和电压

    2.3 V

  • 栅极/发射极最大电压

    20 V 在25

  • C的连续集电极电流

    150 A

  • 栅极—射极漏泄电流

    400 nA

  • 功率耗散

    187 W

  • 封装/箱体

    TO-247

  • 封装

    Tube

更新时间:2025-8-15 10:31:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
IXYS
22+
TO247AD (IXGH)
9000
原厂渠道,现货配单
IXYS/艾赛斯
22+
TO-247
25000
只做原装进口现货,专注配单
IXYS/艾赛斯
21+
TO-3P
23600
十年以上分销商原装进口件服务型企业0755-83790645
IXYS/艾赛斯
21+
TO247
10000
原装现货假一罚十
IXYS/艾赛斯
24+
NA/
8630
原装现货,当天可交货,原型号开票
IXYS/艾赛斯
23+
TO-247
50000
全新原装正品现货,支持订货
IXYS
25+
TO-247-3
9350
独立分销商 公司只做原装 诚心经营 免费试样正品保证
IXYS/艾赛斯
23+
TO-3P
45000
原厂授权一级代理,专业海外优势订货,价格优势、品种
IXYS
24+
TO-247
80000
只做自己库存 全新原装进口正品假一赔百 可开13%增
IXYS
23+
TO-3P
67813
##公司主营品牌长期供应100%原装现货可含税提供技术

IXGH17N100数据表相关新闻