IXGH48N60C3价格

参考价格:¥15.7491

型号:IXGH48N60C3 品牌:Ixys 备注:这里有IXGH48N60C3多少钱,2026年最近7天走势,今日出价,今日竞价,IXGH48N60C3批发/采购报价,IXGH48N60C3行情走势销售排行榜,IXGH48N60C3报价。
型号 功能描述 生产厂家 企业 LOGO 操作
IXGH48N60C3

GenX3 600V IGBT

OVERVIEW IXYS extends its GenX3™ insulated gate bipolar transistor (IGBT) product line to 600 volts. These new IGBTs are manufactured using IXYS’ state-of-the-art GenX3™ IGBT process and utilize IXYS’ advanced Punch-Though (PT) technology, tailored to provide higher surge current capabil

IXYS

艾赛斯

IXGH48N60C3

600V GenX3 IGBTs next generation 600V IGBTs for power conversion applications

文件:839.36 Kbytes Page:4 Pages

IXYS

艾赛斯

IXGH48N60C3

High-Speed PT IGBTs for 40-100kHz Switching

文件:247.69 Kbytes Page:7 Pages

IXYS

艾赛斯

IXGH48N60C3

封装/外壳:TO-247-3 包装:卷带(TR) 描述:IGBT 600V 75A 300W TO247AD 分立半导体产品 晶体管 - UGBT、MOSFET - 单

IXYS

艾赛斯

IXGH48N60C3

PT 高频 IGBT

LITTELFUSE

力特

GenX3TM 600V IGBT w/ SiC Anti-Parallel Diode

GenX3™ 600V IGBT w/ SiC Anti-Parallel Diode High Speed PT IGBT for 40 - 100kHz Switching Features • Optimized for Low Switching Losses • Square RBSOA • Anti-Parallel Schottky Diode • Fast Switching • Avalanche Rated • International Standard Package Advantages • High Power Density • Low

IXYS

艾赛斯

GenX3 600V IGBT with Diode

OVERVIEW IXYS extends its GenX3™ insulated gate bipolar transistor (IGBT) product line to 600 volts. These new IGBTs are manufactured using IXYS’ state-of-the-art GenX3™ IGBT process and utilize IXYS’ advanced Punch-Though (PT) technology, tailored to provide higher surge current capabil

IXYS

艾赛斯

PT 高频IGBT

LITTELFUSE

力特

PT 高频IGBT

LITTELFUSE

力特

封装/外壳:TO-247-3 包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 描述:IGBT 600V 75A 300W TO247AD 分立半导体产品 晶体管 - UGBT、MOSFET - 单

IXYS

艾赛斯

600V GenX3 IGBTs next generation 600V IGBTs for power conversion applications

文件:839.36 Kbytes Page:4 Pages

IXYS

艾赛斯

GenX3 600V IGBT

OVERVIEW IXYS extends its GenX3™ insulated gate bipolar transistor (IGBT) product line to 600 volts. These new IGBTs are manufactured using IXYS’ state-of-the-art GenX3™ IGBT process and utilize IXYS’ advanced Punch-Though (PT) technology, tailored to provide higher surge current capabil

IXYS

艾赛斯

High-Speed PT IGBTs for 40-100kHz Switching

文件:247.69 Kbytes Page:7 Pages

IXYS

艾赛斯

600V GenX3 IGBTs next generation 600V IGBTs for power conversion applications

文件:839.36 Kbytes Page:4 Pages

IXYS

艾赛斯

IXGH48N60C3产品属性

  • 类型

    描述

  • 型号

    IXGH48N60C3

  • 功能描述

    IGBT 晶体管 48 Amps 600V

  • RoHS

  • 制造商

    Fairchild Semiconductor

  • 配置

    集电极—发射极最大电压

  • VCEO

    650 V

  • 集电极—射极饱和电压

    2.3 V

  • 栅极/发射极最大电压

    20 V 在25

  • C的连续集电极电流

    150 A

  • 栅极—射极漏泄电流

    400 nA

  • 功率耗散

    187 W

  • 封装/箱体

    TO-247

  • 封装

    Tube

更新时间:2026-1-29 17:30:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
IXYS
23+
TO-247
10000
全新、原装
TI/德州仪器
2450+
QFP
9850
只做原装正品现货或订货假一赔十!
IXYS/艾赛斯
2223+
26800
只做原装正品假一赔十为客户做到零风险
IXYS
25+23+
TO-247
28826
绝对原装正品全新进口深圳现货
IXYS
原厂封装
9800
原装进口公司现货假一赔百
IXYS(艾赛斯)
25+
N/A
7500
IXYS(艾赛斯)全系列在售
IXYS
10+
TO247
3200
ixys
20+
原装模块
368
样品可出,原装现货
IXYS
25+
TO-247-3
9350
独立分销商 公司只做原装 诚心经营 免费试样正品保证
IXYS
22+
TO247AD (IXGH)
9000
原厂渠道,现货配单

IXGH48N60C3芯片相关品牌

IXGH48N60C3数据表相关新闻