GenX3 600V IGBT

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封装/外壳：TO-247-3 包装：管件 描述：IGBT 600V 92A 250W TO247 分立半导体产品 晶体管 - UGBT、MOSFET - 单

PT 中频IGBT

GenX3TM 600V IGBT w/ SiC Anti-Parallel Diode

Medium Speed Low Vsat PT IGBT for 5 - 40kHz Switching Features ● Optimized for Low Conduction and Switching Losses ● Square RBSOA ● Anti-Parallel Schottky Diode ● International Standard Package Advantages ● High Power Density ● Low Gate Drive Requirement Applications ● Power Inverte

GenX3 600V IGBT w/ Diode

Medium-Speed Low-Vsat PT IGBT for 5 - 40kHz Switching Features • Optimized for Low Conduction and Switching Losses • Square RBSOA • Anti-Parallel Ultra Fast Diode • International Standard Package Advantages • High Power Density • Low Gate Drive Requirement Applications • Power Inver

GenX3 600V IGBT

OVERVIEW IXYS extends its GenX3™ insulated gate bipolar transistor (IGBT) product line to 600 volts. These new IGBTs are manufactured using IXYS’ state-of-the-art GenX3™ IGBT process and utilize IXYS’ advanced Punch-Though (PT) technology, tailored to provide higher surge current capabil

封装/外壳：TO-247-3 包装：管件 描述：IGBT 600V 250W TO247AD 分立半导体产品 晶体管 - UGBT、MOSFET - 单

600V GenX3 IGBTs next generation 600V IGBTs for power conversion applications

文件：839.36 Kbytes Page：4 Pages

PT 中频IGBT

PT 中频IGBT

600V GenX3 IGBTs next generation 600V IGBTs for power conversion applications

文件：839.36 Kbytes Page：4 Pages