型号 功能描述 生产厂家 企业 LOGO 操作
IXGH32N50B

HiPerFAST IGBT

VCES = 500 V IC25 = 60 A VCE(sat) = 2.0 V tfi = 80 ns Features International standard packages JEDEC TO-247 SMD surface mountable and JEDEC TO-247 AD High current handling capability Newest generation HDMOSTM process MOS Gate turn-on - drive simplicity Appl

IXYS

艾赛斯

IXGH32N50B

HiPerFAST™ IGBT

Littelfuse

力特

HiPerFAST IGBT

VCES = 500 V IC25 = 60 A VCE(sat) = 2.0 V tfi = 80 ns Features International standard packages JEDEC TO-247 SMD surface mountable and JEDEC TO-247 AD High current handling capability Newest generation HDMOSTM process MOS Gate turn-on - drive simplicity Appl

IXYS

艾赛斯

HiPerFAST IGBT with Diode Combi Pack

VCES = 500 V IC25 = 60 A VCE(sat) = 2.0 V tfi = 80 ns Features International standard packages JEDEC TO-247 SMD surface mountable and JEDEC TO-247 AD High frequency IGBT and antiparallel FRED in one package High current handling capability Newest generation HDMOSTM process MOS Gate turn-o

IXYS

艾赛斯

HiPerFAST IGBT with Diode Combi Pack

VCES = 500 V IC25 = 60 A VCE(sat) = 2.0 V tfi = 80 ns Features International standard packages JEDEC TO-247 SMD surface mountable and JEDEC TO-247 AD High frequency IGBT and antiparallel FRED in one package High current handling capability Newest generation HDMOSTM process MOS Gate turn-o

IXYS

艾赛斯

HiPerFAST™ IGBT with Diode Combi Pack

Littelfuse

力特

Power MOSFET(Vdss=500V, Rds(on)typ.=0.135ohm, Id=32A)

SMPS MOSFET Applications Switch Mode Power Supply (SMPS) Uninterruptible Power Supply High Speed Power Switching Hard Switched and High Frequency Circuits Benefits Low Gate Charge Qg results in Simple Drive Requirement Improved Gate, Avalanche and Dynamic dv/dt Rugg

IRF

Power MOSFET(Vdss=500V, Rds(on)typ.=0.135ohm, Id=32A)

SMPS MOSFET Applications Switch Mode Power Supply (SMPS) Uninterruptible Power Supply High Speed Power Switching Hard Switched and High Frequency Circuits Benefits Low Gate Charge Qg results in Simple Drive Requirement Improved Gate, Avalanche and Dynamic dv/dt Rugg

IRF

HiPerFET Power MOSFETs ISOPLUS247

文件:92.65 Kbytes Page:4 Pages

IXYS

艾赛斯

HEXFET짰 Power MOSFET

文件:44.55 Kbytes Page:3 Pages

IRF

HEXFET Power MOSFET

文件:178.89 Kbytes Page:8 Pages

IRF

IXGH32N50B产品属性

  • 类型

    描述

  • 型号

    IXGH32N50B

  • 制造商

    IXYS

  • 制造商全称

    IXYS Corporation

  • 功能描述

    HiPerFAST IGBT

更新时间:2025-10-2 16:20:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
9301
1
公司优势库存 热卖中!
IX
24+
TO
200
I
23+
TO-247
6000
原装正品,支持实单
IXYS
23+
TO-3P
8000
只做原装现货
IXYS
23+
TO-3P
7000
I
TO-247
22+
6000
十年配单,只做原装
IXYS/艾赛斯
23+
TO-3P
24400
原厂授权一级代理,专业海外优势订货,价格优势、品种
IXYS
9636+
TO-3P
19
现货
IXYS/艾赛斯
21+
TO-247
10000
原装现货假一罚十
I
25+
TO-247
12300
独立分销商 公司只做原装 诚心经营 免费试样正品保证

IXGH32N50B数据表相关新闻