Low VCE(sat), High speed IGBT

Features ● International standard packages ● 2nd generation HDMOSTM process ● Low VCE(sat) - for low on-state conduction losses ● High current handling capability ● MOS Gate turn-on - drive simplicity ● Voltage rating guaranteed at high temperature (125°C) Applications ● AC motor s

Low V High speed IGBT

Features ● International standard packages ● 2nd generation HDMOSTM process ● Low VCE(sat) - for low on-state conduction losses ● High current handling capability ● MOS Gate turn-on - drive simplicity ● Voltage rating guaranteed at high temperature (125°C) Applications ● AC motor s

封装/外壳：TO-247-3 包装：管件 描述：IGBT 1000V 50A 200W TO247AD 分立半导体产品 晶体管 - UGBT、MOSFET - 单

PT IGBTs

Low V High speed IGBT

Features ● International standard packages ● 2nd generation HDMOSTM process ● Low VCE(sat) - for low on-state conduction losses ● High current handling capability ● MOS Gate turn-on - drive simplicity ● Voltage rating guaranteed at high temperature (125°C) Applications ● AC motor s

Low VCE(sat), High speed IGBT

Features ● International standard packages ● 2nd generation HDMOSTM process ● Low VCE(sat) - for low on-state conduction losses ● High current handling capability ● MOS Gate turn-on - drive simplicity ● Voltage rating guaranteed at high temperature (125°C) Applications ● AC motor s

High speed IGBT with Diode

Features ● International standard package JEDEC TO-247 AD ● IGBT and anti-parallel FRED in one package ● 2nd generation HDMOSTM process ● Low VCE(sat) - for minimum on-state conduction losses ● MOS Gate turn-on - drive simplicity ● Fast Recovery Epitaxial Diode (FRED) - soft reco

PT IGBTs

封装/外壳：TO-247-3 包装：管件 描述：IGBT 1000V 50A 200W TO247AD 分立半导体产品 晶体管 - UGBT、MOSFET - 单

N-Channel Enhancement Mode MOSFET

文件：285.52 Kbytes Page：4 Pages

N-Channel Enhancement Mode MOSFET

文件：241.07 Kbytes Page：4 Pages