型号 功能描述 生产厂家 企业 LOGO 操作
IXGH25N100

Low V High speed IGBT

Features ● International standard packages ● 2nd generation HDMOSTM process ● Low VCE(sat) - for low on-state conduction losses ● High current handling capability ● MOS Gate turn-on - drive simplicity ● Voltage rating guaranteed at high temperature (125°C) Applications ● AC motor s

IXYS

艾赛斯

IXGH25N100

Low VCE(sat), High speed IGBT

Features ● International standard packages ● 2nd generation HDMOSTM process ● Low VCE(sat) - for low on-state conduction losses ● High current handling capability ● MOS Gate turn-on - drive simplicity ● Voltage rating guaranteed at high temperature (125°C) Applications ● AC motor s

IXYS

艾赛斯

IXGH25N100

封装/外壳:TO-247-3 包装:管件 描述:IGBT 1000V 50A 200W TO247AD 分立半导体产品 晶体管 - UGBT、MOSFET - 单

IXYS

艾赛斯

IXGH25N100

PT IGBTs

Littelfuse

力特

Low VCE(sat), High speed IGBT

Features ● International standard packages ● 2nd generation HDMOSTM process ● Low VCE(sat) - for low on-state conduction losses ● High current handling capability ● MOS Gate turn-on - drive simplicity ● Voltage rating guaranteed at high temperature (125°C) Applications ● AC motor s

IXYS

艾赛斯

Low V High speed IGBT

Features ● International standard packages ● 2nd generation HDMOSTM process ● Low VCE(sat) - for low on-state conduction losses ● High current handling capability ● MOS Gate turn-on - drive simplicity ● Voltage rating guaranteed at high temperature (125°C) Applications ● AC motor s

IXYS

艾赛斯

High speed IGBT with Diode

Features ● International standard package JEDEC TO-247 AD ● IGBT and anti-parallel FRED in one package ● 2nd generation HDMOSTM process ● Low VCE(sat) - for minimum on-state conduction losses ● MOS Gate turn-on - drive simplicity ● Fast Recovery Epitaxial Diode (FRED) - soft reco

IXYS

艾赛斯

High speed IGBT with Diode

Features ● International standard package JEDEC TO-247 AD ● IGBT and anti-parallel FRED in one package ● 2nd generation HDMOSTM process ● Low VCE(sat) - for minimum on-state conduction losses ● MOS Gate turn-on - drive simplicity ● Fast Recovery Epitaxial Diode (FRED) - soft reco

IXYS

艾赛斯

封装/外壳:TO-247-3 包装:管件 描述:IGBT 1000V 50A 200W TO247AD 分立半导体产品 晶体管 - UGBT、MOSFET - 单

IXYS

艾赛斯

PT IGBTs

Littelfuse

力特

PT IGBTs

Littelfuse

力特

N-Channel Enhancement Mode MOSFET

文件:285.52 Kbytes Page:4 Pages

DACO

罡境电子

N-Channel Enhancement Mode MOSFET

文件:241.07 Kbytes Page:4 Pages

DACO

罡境电子

IXGH25N100产品属性

  • 类型

    描述

  • 型号

    IXGH25N100

  • 功能描述

    IGBT 50A 1000V TO-247AD

  • RoHS

  • 类别

    分离式半导体产品 >> IGBT - 单路

  • 系列

    -

  • 标准包装

    30

  • 系列

    GenX3™ IGBT

  • 类型

    PT 电压 -

  • 集电极发射极击穿(最大)

    1200V Vge,

  • Ic时的最大Vce(开)

    3V @ 15V,100A 电流 -

  • 集电极(Ic)(最大)

    200A 功率 -

  • 最大

    830W

  • 输入类型

    标准

  • 安装类型

    通孔

  • 封装/外壳

    TO-247-3

  • 供应商设备封装

    PLUS247?-3

  • 包装

    管件

更新时间:2025-11-7 17:49:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
IXYS
25+
管3P
18000
原厂直接发货进口原装
IXYS
25+23+
TO-247
15217
绝对原装正品全新进口深圳现货
IXYS/艾赛斯
24+
NA/
13888
优势代理渠道,原装正品,可全系列订货开增值税票
IXYS
22+
TO247AD (IXGH)
9000
原厂渠道,现货配单
IXYS
23+
TO-247
8560
受权代理!全新原装现货特价热卖!
IXYS
原厂封装
9800
原装进口公司现货假一赔百
IXYS
23+
TO-3P
5000
原装正品,假一罚十
IXYS
24+
TO-247AD-3
8866
IXYS
24+
TO-247
80000
只做自己库存 全新原装进口正品假一赔百 可开13%增
IXYS/艾赛斯
23+
TO
10000
原厂授权一级代理,专业海外优势订货,价格优势、品种

IXGH25N100数据表相关新闻