HiPerFAST IGBT

Features •Very high freqency IGBT •New generation HDMOSTM process •International standard package JEDEC TO-220AB and TO-263AA •High peak current handling capability Applications •PFC circuits •AC motor speed control •DC servo & robot drives •Switch-mode and reson

封装/外壳：TO-263-3，D²Pak（2 引线 + 接片），TO-263AB 包装：管件 描述：IGBT 600V 24A 100W TO263AA 分立半导体产品 晶体管 - UGBT、MOSFET - 单

PT IGBTs

HiPerFAST IGBT Lightspeed Series

Features •Very high frequency IGBT •New generation HDMOSTM process •International standard package JEDEC TO-220AB and TO-263AA •High peak current handling capability Applications •PFC circuit •AC motor speed control •DC servo and robot drives •Switch-mode and reso

封装/外壳：TO-263-3，D²Pak（2 引线 + 接片），TO-263AB 包装：管件 描述：IGBT 600V 24A 100W TO263AA 分立半导体产品 晶体管 - UGBT、MOSFET - 单

PT IGBTs

12 Amps, 600/650 Volts N-CHANNEL MOSFET

The UTC 12N60are N-Channel enhancement mode power field effect transistors (MOSFET) which are produced using UTCs proprietary, planar stripe, DMOS technology. These devices are suited for high efficiency switch mode power supply. To minimize on-state resistance, provide superior switching p

12 Amps, 600/650 Volts N-CHANNEL MOSFET

文件：358.2 Kbytes Page：7 Pages

12A 600V N-channel Enhancement Mode Power MOSFET

文件：897.58 Kbytes Page：11 Pages

12A 600V N-channel Enhancement Mode Power MOSFET

文件：898.09 Kbytes Page：11 Pages

12A 600V N-channel Enhancement Mode Power MOSFET

文件：897.54 Kbytes Page：11 Pages