封装/外壳：TO-247-3 变式 包装：卷带（TR） 描述：MOSFET N-CH 300V 52A PLUS247-3 分立半导体产品 晶体管 - FET，MOSFET - 单个

MOSFET N-CH 300V 52A PLUS247-3

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 32A@ TC=25℃ ·Drain Source Voltage : VDSS= 300V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 75mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-D

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID= 52A@ TC=25℃ ·Drain Source Voltage- : VDSS= 300V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 73mΩ(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC co

PolarHT Power MOSFET HiPerFET

N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Features • International standard packages • Fast recovery diode • Avalanche rated • Low package inductance - easy to drive and to protect Advantages • Easy to mount • Space savings • High power density

PolarHTTM HiPerFET Power MOSFET

文件：97.5 Kbytes Page：5 Pages

Power MOSFETs

文件：195.18 Kbytes Page：6 Pages