位置：首页 > IC中文资料第4075页 > IXFX180N15
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
IXFX180N15 | isc N-Channel MOSFET Transistor FEATURES ·Drain Current –ID=180A@ TC=25℃ ·Drain Source Voltage- : VDSS=150V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 11mΩ(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC con | ISC 无锡固电 |   | |
Polar HiPerFET Power MOSFET Polar™ HiPerFET Power MOSFET N-Channel Enhancement Mode Fast Intrinsic Diode Avalanche Rated Features • International standard packages • Unclamped Inductive Switching (UIS) rated • Low package inductance - easy to drive and to protect Advantages • Easy to mount • Space savings • H | IXYS 艾赛斯 | | ||
N通道HiPerFET | Littelfuse 力特 | | ||
Polar HiPerFET Power MOSFET Polar™ HiPerFET Power MOSFET N-Channel Enhancement Mode Fast Intrinsic Diode Avalanche Rated Features • International standard packages • Unclamped Inductive Switching (UIS) rated • Low package inductance - easy to drive and to protect Advantages • Easy to mount • Space savings • H | IXYS 艾赛斯 | | ||
PolarHT HiPerFET Power MOSFET PolarHT™ HiPerFET Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Features • International standard package • Encapsulating epoxy meets UL 94 V-0, flammability classification • miniBLOC with Aluminium nitride isolation • Fast recovery diode • Unclamped Inducti | IXYS 艾赛斯 | | ||
N-Channel MOSFET Transistor FEATURES · Drain Current -ID= 150A@ TC=25℃ · Drain Source Voltage -VDSS= 150V(Min) · Static Drain-Source On-Resistance -RDS(on) = 11mΩ(Max)@VGS= 10V APPLICATIONS · Switching | ISC 无锡固电 | | ||
isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID= 100A@ TC=25℃ ·Drain Source Voltage -VDSS= 150V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 13mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive. | ISC 无锡固电 | | ||
PolarHV HiPerFET Power MOSFET ISOPLUS247 PolarHV™ HiPerFET Power MOSFET ISOPLUS247™ (Electrically Isolated Back Surface) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Features • International standard isolated package • UL recognized package • Silicon chip on Direct-Copper-Bond substrate - High power dissipa | IXYS 艾赛斯 | |
IXFX180N15产品属性
- 类型
描述
- 型号
IXFX180N15
- 功能描述
MOSFET 180 Amps 150V 0.011 Ohm Rds
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IXYS/艾赛斯 |
24+ |
NA/ |
13 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
IXYS/艾赛斯 |
24+ |
PLUS247-3 |
990000 |
明嘉莱只做原装正品现货 |
|||
IXYS(艾赛斯) |
25+ |
封装 |
500000 |
源自原厂成本,高价回收工厂呆滞 |
|||
IXYS |
22+ |
TO-247 |
20000 |
公司只做原装 品质保障 |
|||
IXYS |
21+ |
TO-247 |
1496 |
只做原装,绝对现货,原厂代理商渠道,欢迎电话微信查 |
|||
IXYS |
18+ |
TO-247 |
524 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
IXYS |
原厂封装 |
9800 |
原装进口公司现货假一赔百 |
||||
IXYS/艾赛斯 |
17+ |
PLUS247 |
31518 |
原装正品 可含税交易 |
|||
IXYS/LITTELFUSE |
1921 |
TO-247 |
15800 |
全新原装正品现货直销 |
|||
IXYS |
23+ |
TO-247 |
50000 |
全新原装正品现货,支持订货 |
IXFX180N15芯片相关品牌
IXFX180N15规格书下载地址
IXFX180N15参数引脚图相关
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IXFX180N15数据表相关新闻
IXFN300N10P
进口代理
2022-12-7IXFT60N60X3HV
IXFT60N60X3HV
2022-8-11IXFP22N65X2M
原装正品现货
2022-7-19IXGH60N60C3D1
IXGH60N60C3D1，全新原装当天发货或门市自取0755-82732291.
2019-12-2IXOLAR?高效25％SolarMD模块SM111K04L
IXYS / Littelfuse的SolarMD模块非常适合为许多类型的电池供电或绿色电力产品充电
2019-9-17IXOLAR?高效25％SolarBIT太阳能电池KXOB25-12X1F
IXYS / Littelfuse的SolarBIT非常适合为许多类型的电池供电的电网产品充电
2019-9-17
DdatasheetPDF页码索引
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