PolarHV™ HiPerFET Power MOSFET ISOPLUS247™ (Electrically Isolated Back Surface)

N-Channel Enhancement Mode

Avalanche Rated

Fast Intrinsic Diode

Features

• International standard isolated package

• UL recognized package

• Silicon chip on Direct-Copper-Bond substrate

- High power dissipation

- Isolated mounting surface

- 2500V electrical isolation

• Unclamped Inductive Switching (UIS) rated

• Low package inductance

- easy to drive and to protect

• Fast intrinsic diode

Advantages

• Easy to mount

• Space savings

• High power density