位置：首页 > IC中文资料第8451页 > IXFV26N60P
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
IXFV26N60P | N-Channel Enhancement Mode Fast Recovery Diode Avalanche Rated PolarHV™ Power MOSFET N-Channel Enhancement Mode Fast Recovery Diode Avalanche Rated Features • Fast Recovery diode • Unclamped Inductive Switching (UIS) rated • International standard packages • Low package inductance - easy to drive and to protect Advantages • Easy to mount • Space savi | IXYS 艾赛斯 |   | |
IXFV26N60P | N-Channel: Power MOSFETs with Fast Intrinsic Diode (HiPerFET™) | Littelfuse 力特 | | |
N-Channel Enhancement Mode Fast Recovery Diode Avalanche Rated PolarHV™ Power MOSFET N-Channel Enhancement Mode Fast Recovery Diode Avalanche Rated Features • Fast Recovery diode • Unclamped Inductive Switching (UIS) rated • International standard packages • Low package inductance - easy to drive and to protect Advantages • Easy to mount • Space savi | IXYS 艾赛斯 | | ||
N-Channel: Power MOSFETs with Fast Intrinsic Diode (HiPerFET™) | Littelfuse 力特 | | ||
SMPS MOSFET Features and Benefits • Superfast body diode eliminates the need for external diodes in ZVS applications • Lower Gate charge results in simpler drive requirements • Enhanced dV/dt capabilities offer improved ruggedness • Higher Gate voltage threshold offers improved noise immunity Applica | IRF | | ||
Power MOSFET FEATURES • Superfast body diode eliminates the need for external diodes in ZVS applications • Lower gate charge results in simpler drive requirements • Enhanced dV/dt capabilities offer improved ruggedness • Higher gate voltage threshold offers improved noise immunity • Material categoriza | VishayVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET Power MOSFET FEATURES • Superfast Body Diode Eliminates the Need for External Diodes in ZVS Applications • Lower Gate Charge Results in Simpler Drive Requirements • Enhanced dV/dt Capabilities Offer Improved Ruggedness • Higher Gate Voltage Threshold Offers Improved Noise Immunity | VishayVishay Siliconix 威世威世科技公司 | | ||
iscN-Channel MOSFET Transistor • DESCRITION • Switching Voltage Regulators • FEATURES • Low drain-source on-resistance: RDS(ON) =0.25Ω (MAX) • Enhancement mode: Vth = 3.0 to 5.0V (VDS = 10 V, ID=0.25mA) • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation | ISC 无锡固电 | | ||
Power MOSFET 文件：226.66 Kbytes Page：11 Pages | VishayVishay Siliconix 威世威世科技公司 | |
IXFV26N60P产品属性
- 类型
描述
- 型号
IXFV26N60P
- 功能描述
MOSFET 600V 26A
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IXYS/艾赛斯 |
23+ |
PLUSTO-220 |
12300 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
|||
IXYS |
23+ |
TO-220-3 |
11846 |
一级代理商现货批发,原装正品,假一罚十 |
|||
IXYS |
23+ |
TO-220-3 |
67787 |
##公司主营品牌长期供应100%原装现货可含税提供技术 |
|||
IXYS(艾赛斯) |
23+ |
N/A |
7500 |
IXYS(艾赛斯)全系列在售 |
|||
IXYS |
22+ |
TO2203 Short Tab |
9000 |
原厂渠道,现货配单 |
|||
IXYS |
24+ |
PLUS-220 |
250 |
||||
IXYS |
25+ |
PLUSTO-220 |
12300 |
独立分销商 公司只做原装 诚心经营 免费试样正品保证 |
IXFV26N60P规格书下载地址
IXFV26N60P参数引脚图相关
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IXFV26N60P数据表相关新闻
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原装正品现货
2022-7-19IXGH60N60C3D1
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2019-12-2IXOLAR?高效25％SolarMD模块SM111K04L
IXYS / Littelfuse的SolarMD模块非常适合为许多类型的电池供电或绿色电力产品充电
2019-9-17IXOLAR?高效25％SolarBIT太阳能电池KXOB25-12X1F
IXYS / Littelfuse的SolarBIT非常适合为许多类型的电池供电的电网产品充电
2019-9-17
DdatasheetPDF页码索引
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