包装：卷带（TR） 描述：MOSFET N-CH TO268 分立半导体产品 晶体管 - FET，MOSFET - 单个

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 35A@ TC=25℃ ·Drain Source Voltage : VDSS= 200V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 36mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-D

HIPERFET POWER MOSFETs

HiPerFET™ Power MOSFETs N-Channel Enhancement Mode High dv/dt, Low trr, HDMOS™ Family

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID= 74A@ TC=25℃ ·Drain Source Voltage- : VDSS= 200V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 30mΩ(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC co

PolarHT HiPerFET Power MOSFET ISOPLUS220

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PolarHT HiPerFET Power MOSFET

文件：706.91 Kbytes Page：5 Pages