型号 功能描述 生产厂家&企业 LOGO 操作
IXFT24N50

HiPerFET Power MOSFETs

HiPerFETs The hIPerFET family of Power MOSFETs is designed to provice superior dv/dt, performance while eliminating the need for discrete, fase recovery free wheeling rectifiers In a board range of power switching applications.

IXYS

HiPerFET Power MOSFETs

N-Channel Enhancement Mode Avalanche Rated, Low Qg ,High dv/dt Features IXYS advanced low Qg process International standard packages Low RDS (on) Unclamped Inductive Switching (UIS) rated Fast switching Molding epoxies meet UL 94 V-0 flammability classification

IXYS

24 Amps, 500 Volts N-CHANNEL POWER MOSFET

DESCRIPTION The UTC24N50 is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology allows a minimum on-state resistance and superior switching performance. It also can withstand high energy pulse in the avalanc

UTC

友顺

N-Channel MOSFET 500V, 24A, 0.19廓

Description UniFET™ MOSFET is Fairchild Semiconductor®’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength. This device family is suitable f

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

24A, 500V N-CHANNEL POWER MOSFET

文件:213.36 Kbytes Page:6 Pages

UTC

友顺

Fast Switching

文件:49.82 Kbytes Page:2 Pages

ISC

无锡固电

24A竊?00V N-CHANNEL MOSFET

文件:290.67 Kbytes Page:5 Pages

KIA

可易亚半导体

IXFT24N50产品属性

  • 类型

    描述

  • 型号

    IXFT24N50

  • 功能描述

    MOSFET 24 Amps 500V

  • RoHS

  • 制造商

    STMicroelectronics

  • 晶体管极性

    N-Channel

  • 汲极/源极击穿电压

    650 V

  • 闸/源击穿电压

    25 V

  • 漏极连续电流

    130 A 电阻汲极/源极

  • RDS(导通)

    0.014 Ohms

  • 配置

    Single

  • 安装风格

    Through Hole

  • 封装/箱体

    Max247

  • 封装

    Tube

更新时间:2025-8-13 17:35:00
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