HiPerFET-TM Power MOSFETs ISOPLUS247-TM

HiPerFET™ Power MOSFETs ISOPLUS247™ (Electrically Isolated Back Surface) Single Die MOSFET Features • Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation • Low drain to tab capacitance(

HiPerRF Power MOSFETs F-Class: MegaHertz Switching

VDSS = 500 V ID25 = 55 A RDS(on)= 90 mΩ trr ≤ 250 ns Features ● Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation ● RF capable Mosfets ● Low gate charge and capacitances - easier to drive -faste

HiPerFETTM Power MOSFET

HiPerFET Power MOSFET Single Die MOSFET Features • Low cost direct-copper bonded aluminium package • Encapsulating epoxy meets UL 94 V-0, flammability classification • 2500V isolation • Low drain to case capacitance • Low RDS (on) HDMOSTM process • Rugged polysilicon gate cell structure •

HiPerFET Power MOSFET

HiPerFET™ Power MOSFET Single Die MOSFET Features • International standard packages • Encapsulating epoxy meets UL 94 V-0, flammability classification • miniBLOC with Aluminium nitride isolation • Low RDS (on) HDMOSTM process • Rugged polysilicon gate cell structure • Unc

HiPerFET Power MOSFET

HiPerFET™ Power MOSFET Single Die MOSFET Features • International standard packages • Encapsulating epoxy meets UL 94 V-0, flammability classification • miniBLOC with Aluminium nitride isolation • Low RDS (on) HDMOSTM process • Rugged polysilicon gate cell structure • Unc

HiPerRF Power MOSFETs

HiPerFET™ Power MOSFET F-Class: MegaHertz Switching N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic Rg High dV/dt, Low trr Features • RF capable Mosfets • Rugged polysilicon gate cell structure • Double metal process for low gate resistance • Unclamped

HiPerFET Power MOSFETs ISOPLUS247

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