HiPerFET-TM Power MOSFETs ISOPLUS247-TM

HiPerFET™ Power MOSFETs ISOPLUS247™ (Electrically Isolated Back Surface) Single Die MOSFET Features • Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation • Low drain to tab capacitance(

N-Channel: Power MOSFETs with Fast Intrinsic Diode (HiPerFET™)

500V N-Channel MOSFET

Description These N-Channel enhancement mode power field effect transis tors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. Features • 48A, 500V, RDS(on)= 0.105Ω@VGS= 10 V • Low gate charge ( typical 105 nC) •Low Crss ( typical 45 pF) •Fast switchin

DESIGN/PROCESS CHANGE NOTIFICATION

Description SuperFET®II MOSFET is Fairchild Semiconductor®’s first generation of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance.This advanced technology is tailored to minimize conducti

Wireless Charging Coil Assembly

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50Ampere,500Volt N-Channel Planar Process Power MOSFET

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500V N-Channel MOSFET

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