500V N-Channel MOSFET

Description These N-Channel enhancement mode power field effect transis tors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. Features • 48A, 500V, RDS(on)= 0.105Ω@VGS= 10 V • Low gate charge ( typical 105 nC) •Low Crss ( typical 45 pF) •Fast switchin

DESIGN/PROCESS CHANGE NOTIFICATION

Description SuperFET®II MOSFET is Fairchild Semiconductor®’s first generation of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance.This advanced technology is tailored to minimize conducti

功率 MOSFET，N 沟道，UniFETTM，500V，48A，105mΩ，TO-3P

UniFETTM MOSFET 是飞兆半导体®的高压 MOSFET 系列产品，基于平面条形和 DMOS 技术。 该 MOSFET 产品专用于降低通态电阻，并提供更好的开关性能和更高的雪崩能量强度。 该器件系列适用于开关电源转换器应用，如功率因数校正（PFC）、平板显示器（FPD）电视电源、ATX 及灯用电子镇流器。 •RDS(on) = 56mΩ （最大值）@ VGS = 10V, ID = 29.5A\n•低栅极电荷（典型值 77nC） \n•低 Crss（典型值 80pF） \n•100% 经过雪崩击穿测试;

isc N-Channel MOSFET Transistor

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50Ampere,500Volt N-Channel Planar Process Power MOSFET

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500V N-Channel MOSFET

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500V N-Channel MOSFET

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HiPerFET Power MOSFET

HiPerFET™ Power MOSFET Single Die MOSFET Features • International standard packages • Encapsulating epoxy meets UL 94 V-0, flammability classification • miniBLOC with Aluminium nitride isolation • Low RDS (on) HDMOSTM process • Rugged polysilicon gate cell structure • Unc

500V N-Channel MOSFET

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HiPerFET Power MOSFETs

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POWER FIELD EFFECT TRANSISTOR N-CHANNEL ENHANCEMENT MODE SILICON GATE TMOS

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