isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 9.5A@ TC=25℃ ·Drain Source Voltage -VDSS= 1000V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 1.1Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

HiPerFET Power MOSFET Q2-Class

HiPerFET™ Power MOSFET Q2-Class N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low Qg Low intrinsic Rg, low trr Features • Double Metal Process for Low Gate Resistance • International Standard Package • Epoxy Meet UL 94 V-0, Flammability Classification • Low Rds(on), Low Qg • Ava

N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family

Features ● International standard packages ● Low RDS (on) HDMOSTM process ● Rugged polysilicon gate cell structure ● Unclamped Inductive Switching (UIS) rated ● Low package inductance - easy to drive and to protect ● Fast intrinsic Rectifier Applications ● DC-DC converters ● Battery c

HiPerFET Power MOSFETs

Features ● International standard packages ● Low RDS (on) HDMOSTM process ● Rugged polysilicon gate cell structure ● Unclamped Inductive Switching (UIS) rated ● Low package inductance - easy to drive and to protect ● Fast intrinsic Rectifier Applications ● DC-DC converters ● Battery c

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 14A@ TC=25℃ ·Drain Source Voltage : VDSS= 1000V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.75Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC

N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family

Features ● International standard packages ● Low RDS (on) HDMOSTM process ● Rugged polysilicon gate cell structure ● Unclamped Inductive Switching (UIS) rated ● Low package inductance - easy to drive and to protect ● Fast intrinsic Rectifier Applications ● DC-DC converters ● Battery c