IXFH14N100价格

参考价格:¥67.8053

型号:IXFH14N100Q2 品牌:IXYS 备注:这里有IXFH14N100多少钱,2025年最近7天走势,今日出价,今日竞价,IXFH14N100批发/采购报价,IXFH14N100行情走势销售排行榜,IXFH14N100报价。
型号 功能描述 生产厂家&企业 LOGO 操作
IXFH14N100

HiPerFET Power MOSFETs

Features ● International standard packages ● Low RDS (on) HDMOSTM process ● Rugged polysilicon gate cell structure ● Unclamped Inductive Switching (UIS) rated ● Low package inductance - easy to drive and to protect ● Fast intrinsic Rectifier Applications ● DC-DC converters ● Battery c

IXYS

IXFH14N100

N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family

Features ● International standard packages ● Low RDS (on) HDMOSTM process ● Rugged polysilicon gate cell structure ● Unclamped Inductive Switching (UIS) rated ● Low package inductance - easy to drive and to protect ● Fast intrinsic Rectifier Applications ● DC-DC converters ● Battery c

IXYS

IXFH14N100

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 14A@ TC=25℃ ·Drain Source Voltage : VDSS= 1000V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.75Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC

ISC

无锡固电

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 14A@ TC=25℃ ·Drain Source Voltage : VDSS= 1000V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.9Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-

ISC

无锡固电

N-Channel Enhancement Mode Avalanche Rated, Low Qg Low Rg, High dv/dt, Low trr

文件:564.85 Kbytes Page:4 Pages

IXYS

HiPerFET Power MOSFETs Q2-Class

文件:146.77 Kbytes Page:4 Pages

IXYS

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 9.5A@ TC=25℃ ·Drain Source Voltage -VDSS= 1000V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 1.1Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

ISC

无锡固电

N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family

Features ● International standard packages ● Low RDS (on) HDMOSTM process ● Rugged polysilicon gate cell structure ● Unclamped Inductive Switching (UIS) rated ● Low package inductance - easy to drive and to protect ● Fast intrinsic Rectifier Applications ● DC-DC converters ● Battery c

IXYS

IXFH14N100产品属性

  • 类型

    描述

  • 型号

    IXFH14N100

  • 功能描述

    MOSFET 14 Amps 1000V 0.75 Rds

  • RoHS

  • 制造商

    STMicroelectronics

  • 晶体管极性

    N-Channel

  • 汲极/源极击穿电压

    650 V

  • 闸/源击穿电压

    25 V

  • 漏极连续电流

    130 A 电阻汲极/源极

  • RDS(导通)

    0.014 Ohms

  • 配置

    Single

  • 安装风格

    Through Hole

  • 封装/箱体

    Max247

  • 封装

    Tube

更新时间:2025-8-11 23:39:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
IXYS
20+
TO-247
36900
原装优势主营型号-可开原型号增税票
IXYS/艾赛斯
24+
NA/
32363
优势代理渠道,原装正品,可全系列订货开增值税票
IXYS
24+
TO-247
80000
只做自己库存 全新原装进口正品假一赔百 可开13%增
IXYS/艾赛斯
22+
TO-247
25000
只做原装进口现货,专注配单
IXYS
18+
IXYS
85600
保证进口原装可开17%增值税发票
IXYS/艾赛斯
1403+
TO-247
1008
原装现货
IXYS/艾赛斯
23+
TO-3P
10000
原厂授权一级代理,专业海外优势订货,价格优势、品种
IXYS
25+
TO-247
12300
独立分销商 公司只做原装 诚心经营 免费试样正品保证
IXYS
24+
TO-247
8866
IXYS
22+
TO2473
9000
原厂渠道,现货配单

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