HiPerRF Power MOSFETs

Features • International standard package • Encapsulating epoxy meets UL 94 V-0, flammability classification • miniBLOC with Aluminium nitride isolation • Low RDS (on) HDMOSTM process • Rugged polysilicon gate cell structure • Unclamped Inductive Switching (UIS) rated • Low package indu

HiPerFET-TM Power MOSFET

Features • International standard package • Encapsulating epoxy meets UL 94 V-0, flammability classification • miniBLOC with Aluminium nitride isolation • Low RDS (on) HDMOSTM process • Rugged polysilicon gate cell structure • Unclamped Inductive Switching (UIS) rated • Low package indu

HiPerRF Power MOSFETs

Features • International standard package • Encapsulating epoxy meets UL 94 V-0, flammability classification • miniBLOC with Aluminium nitride isolation • Low RDS (on) HDMOSTM process • Rugged polysilicon gate cell structure • Unclamped Inductive Switching (UIS) rated • Low package indu

HiPerRF Power MOSFETs F-Class: MegaHertz Switching

N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic Rg High dV/dt, Low trr Features • RF capable MOSFETs • Double metal process for low gate resistance • Unclamped Inductive Switching (UIS) rated • Low package inductance - easy to drive and to protect

N通道HiPerFET

HiPerFET Power MOSFET

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Switch Mode MOSFETs

封装/外壳：SOT-227-4，miniBLOC 包装：盒 描述：MOSFET N-CH 900V 24A SOT-227B 分立半导体产品 晶体管 - FET，MOSFET - 单个

MOSFET N-CH 900V 24A SOT-227B