型号 功能描述 生产厂家 企业 LOGO 操作
IXFM42N20

HiPerFET Power MOSFETs

HiPerFETs The hIPerFET family of Power MOSFETs is designed to provice superior dv/dt, performance while eliminating the need for discrete, fase recovery free wheeling rectifiers In a board range of power switching applications.

IXYS

艾赛斯

IXFM42N20

HIPERFET Power MOSFTETs

HiPerFETs The hIPerFET family of Power MOSFETs is designed to provice superior dv/dt, performance while eliminating the need for discrete, fase recovery free wheeling rectifiers In a board range of power switching applications.

IXYS

艾赛斯

IXFM42N20

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 42A@ TC=25℃ ·Drain Source Voltage : VDSS= 200V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 60mΩ(Max) ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switching applications

ISC

无锡固电

IXFM42N20

Trans MOSFET N-CH 200V 42A 3-Pin(2+Tab) TO-204AE

ETC

知名厂家

IXFM42N20

N-Channel: Power MOSFETs with Fast Intrinsic Diode (HiPerFET™)

Littelfuse

力特

N-Channel MOSFET Transistor

• DESCRITION • High frequency DC-DC converters • Uninterruptible Power Supplies • FEATURES • Static drain-source on-resistance: RDS(on) ≤55mΩ • Enhancement mode • Fast Switching Speed • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operatio

ISC

无锡固电

N-Channel MOSFET Transistor

• DESCRITION • High frequency DC-DC converters • Uninterruptible Power Supplies • FEATURES • Static drain-source on-resistance: RDS(on) ≤55mΩ • Enhancement mode • Fast Switching Speed • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operatio

ISC

无锡固电

High frequency DC-DC converters

Benefits ● Low Gate-to-Drain Charge to Reduce Switching Losses ● Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) ● Fully Characterized Avalanche Voltage and Current Applications ● High frequency DC-DC converters

IRF

Power MOSFET(Vdss=200V, Rds(on)max=0.055ohm, Id=44A)

Benefits ● Low Gate-to-Drain Charge to Reduce Switching Losses ● Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) ● Fully Characterized Avalanche Voltage and Current Applications ● High frequency DC-DC converters

IRF

Fast Switching

文件:68.06 Kbytes Page:2 Pages

ISC

无锡固电

IXFM42N20产品属性

  • 类型

    描述

  • 型号

    IXFM42N20

  • 制造商

    IXYS

  • 制造商全称

    IXYS Corporation

  • 功能描述

    HiPerFET Power MOSFETs

更新时间:2025-11-20 9:18:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
IXYS/艾赛斯
23+
TO-252
89630
当天发货全新原装现货
IXYS
23+
TO-220
50000
全新原装正品现货,支持订货
IXS
25+
SOP
3200
全新原装、诚信经营、公司现货销售
IXYS
23+
TO-3
60412
##公司主营品牌长期供应100%原装现货可含税提供技术
IXYS
20+
TO-3
35830
原装优势主营型号-可开原型号增税票
IXYS场效应
100
原装现货,价格优惠
IXYS
2318+
TO-3
4862
只做进口原装!假一赔百!自己库存价优!
IXY
0425
6
优势货源原装正品
IXYS
原厂封装
9800
原装进口公司现货假一赔百
IXYS
22+
SOT227
8000
原装正品支持实单

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