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IRFB42N20D价格
参考价格：￥5.9901
型号：IRFB42N20DPBF 品牌：INTERNATIONAL 备注：这里有IRFB42N20D多少钱，2026年最近7天走势，今日出价，今日竞价，IRFB42N20D批发/采购报价，IRFB42N20D行情走势销售排行榜，IRFB42N20D报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
IRFB42N20D | Power MOSFET(Vdss=200V, Rds(on)max=0.055ohm, Id=44A) Benefits ● Low Gate-to-Drain Charge to Reduce Switching Losses ● Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) ● Fully Characterized Avalanche Voltage and Current Applications ● High frequency DC-DC converters | IRF |   | |
IRFB42N20D | High frequency DC-DC converters Benefits ● Low Gate-to-Drain Charge to Reduce Switching Losses ● Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) ● Fully Characterized Avalanche Voltage and Current Applications ● High frequency DC-DC converters | IRF | | |
IRFB42N20D | N-Channel MOSFET Transistor • DESCRITION • High frequency DC-DC converters • Uninterruptible Power Supplies • FEATURES • Static drain-source on-resistance: RDS(on) ≤55mΩ • Enhancement mode • Fast Switching Speed • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operatio | ISC 无锡固电 | | |
IRFB42N20D | 采用 TO-220AB 封装的 200V 单 N 通道 HEXFET 功率 MOSFET | INFINEON 英飞凌 | | |
HEXFET Power MOSFET Benefits ● Low Gate-to-Drain Charge to Reduce Switching Losses ● Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) ● Fully Characterized Avalanche Voltage and Current Applications ● High frequency DC-DC converters ● Motor Control ● Uninterru | IRF | | ||
High frequency DC-DC converters 文件：174.93 Kbytes Page：9 Pages | IRF | | ||
High frequency DC-DC converters 文件：174.93 Kbytes Page：9 Pages | IRF | | ||
200V SGT N-Channel MOSFET Features: • Fast switching speed • 100% avalanche tested • Improved dv/dt capability • Enhanced Avalanche Ruggedness • Lead Free Applications: • Synchronous Rectification in SMPS • Hard Switching and High Speed Circuit • Power Tools • UPS • Motor Control | HUIXIN 慧芯电子 | | ||
N-Channel MOSFET Transistor • DESCRITION • High frequency DC-DC converters • Uninterruptible Power Supplies • FEATURES • Static drain-source on-resistance: RDS(on) ≤55mΩ • Enhancement mode • Fast Switching Speed • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operatio | ISC 无锡固电 | | ||
Fast Switching 文件：68.06 Kbytes Page：2 Pages | ISC 无锡固电 | |
IRFB42N20D产品属性
- 类型
描述
- 型号
IRFB42N20D
- 功能描述
MOSFET N-CH 200V 44A TO-220AB
- RoHS
否
- 类别
分离式半导体产品 >> FET - 单
- 系列
HEXFET®
- 标准包装
1,000
- 系列
MESH OVERLAY™ FET
- 型
MOSFET N 通道，金属氧化物 FET
- 特点
逻辑电平门
- 漏极至源极电压(Vdss)
200V 电流 - 连续漏极(Id) @ 25°
- C
18A 开态Rds（最大）@ Id, Vgs @ 25°
- C
180 毫欧 @ 9A，10V Id 时的
- Vgs(th)（最大）
4V @ 250µA 闸电荷(Qg) @
- Vgs
72nC @ 10V 输入电容(Ciss) @
- Vds
1560pF @ 25V 功率 -
- 最大
40W
- 安装类型
通孔
- 封装/外壳
TO-220-3 整包
- 供应商设备封装
TO-220FP
- 包装
管件
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IR |
25+ |
TO-220 |
20540 |
保证进口原装现货假一赔十 |
|||
IR |
2430+ |
TO-220 |
8540 |
只做原装正品假一赔十为客户做到零风险!! |
|||
VISHAY |
24+ |
TO-220 |
12000 |
VISHAY专营进口原装现货假一赔十 |
|||
INFINEON/英飞凌 |
25+ |
TO-220 |
32360 |
INFINEON/英飞凌全新特价IRFB42N20DPBF即刻询购立享优惠#长期有货 |
|||
IR |
25+ |
TO-220 |
9600 |
百分百原装正品 真实公司现货库存 本公司只做原装 可 |
|||
IRE |
26+ |
TO-220 |
32000 |
原装正品价格优惠,长期优势供应 |
|||
IR |
22+ |
原厂封装 |
15850 |
原装正品，实单请联系 |
|||
IR |
24+ |
TO-220 |
17408 |
原装现货假一赔十 |
|||
IR |
2025+ |
TO-220 |
239 |
原装进口价格优 请找坤融电子! |
|||
IR |
2025+ |
N/A |
70000 |
柒号只做原装 现货价秒杀全网 |
IRFB42N20D规格书下载地址
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