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IRFB42N20D价格
参考价格：￥5.9901
型号：IRFB42N20DPBF 品牌：INTERNATIONAL 备注：这里有IRFB42N20D多少钱，2026年最近7天走势，今日出价，今日竞价，IRFB42N20D批发/采购报价，IRFB42N20D行情走势销售排行榜，IRFB42N20D报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
IRFB42N20D | Power MOSFET(Vdss=200V, Rds(on)max=0.055ohm, Id=44A) Benefits ● Low Gate-to-Drain Charge to Reduce Switching Losses ● Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) ● Fully Characterized Avalanche Voltage and Current Applications ● High frequency DC-DC converters | IRF |   | |
IRFB42N20D | High frequency DC-DC converters Benefits ● Low Gate-to-Drain Charge to Reduce Switching Losses ● Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) ● Fully Characterized Avalanche Voltage and Current Applications ● High frequency DC-DC converters | IRF | | |
IRFB42N20D | N-Channel MOSFET Transistor • DESCRITION • High frequency DC-DC converters • Uninterruptible Power Supplies • FEATURES • Static drain-source on-resistance: RDS(on) ≤55mΩ • Enhancement mode • Fast Switching Speed • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operatio | ISC 无锡固电 | | |
IRFB42N20D | 采用 TO-220AB 封装的 200V 单 N 通道 HEXFET 功率 MOSFET | Infineon 英飞凌 | | |
HEXFET Power MOSFET Benefits ● Low Gate-to-Drain Charge to Reduce Switching Losses ● Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) ● Fully Characterized Avalanche Voltage and Current Applications ● High frequency DC-DC converters ● Motor Control ● Uninterru | IRF | | ||
High frequency DC-DC converters 文件：174.93 Kbytes Page：9 Pages | IRF | | ||
High frequency DC-DC converters 文件：174.93 Kbytes Page：9 Pages | IRF | | ||
N-Channel MOSFET Transistor • DESCRITION • High frequency DC-DC converters • Uninterruptible Power Supplies • FEATURES • Static drain-source on-resistance: RDS(on) ≤55mΩ • Enhancement mode • Fast Switching Speed • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operatio | ISC 无锡固电 | | ||
Fast Switching 文件：68.06 Kbytes Page：2 Pages | ISC 无锡固电 | |
IRFB42N20D产品属性
- 类型
描述
- 型号
IRFB42N20D
- 功能描述
MOSFET N-CH 200V 44A TO-220AB
- RoHS
否
- 类别
分离式半导体产品 >> FET - 单
- 系列
HEXFET®
- 标准包装
1,000
- 系列
MESH OVERLAY™ FET
- 型
MOSFET N 通道，金属氧化物 FET
- 特点
逻辑电平门
- 漏极至源极电压(Vdss)
200V 电流 - 连续漏极(Id) @ 25°
- C
18A 开态Rds（最大）@ Id, Vgs @ 25°
- C
180 毫欧 @ 9A，10V Id 时的
- Vgs(th)（最大）
4V @ 250µA 闸电荷(Qg) @
- Vgs
72nC @ 10V 输入电容(Ciss) @
- Vds
1560pF @ 25V 功率 -
- 最大
40W
- 安装类型
通孔
- 封装/外壳
TO-220-3 整包
- 供应商设备封装
TO-220FP
- 包装
管件
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IR |
24+ |
TO-220AB |
8866 |
||||
Infineon Technologies |
22+ |
TO2203 |
9000 |
原厂渠道,现货配单 |
|||
IR |
24+ |
TO-220 |
45000 |
IR代理原包原盒,假一罚十。最低价 |
|||
IR |
24+ |
TO-220 |
17408 |
原装现货假一赔十 |
|||
IR |
07+ |
原厂原装 |
46400 |
自己公司全新库存绝对有货 |
|||
IR |
21+ |
TO-220 |
10000 |
原装现货假一罚十 |
|||
IR |
2025+ |
TO-220 |
239 |
原装正品 询价请发QQ |
|||
IR |
24+ |
65230 |
|||||
International Rectifier |
2022+ |
2200 |
全新原装 货期两周 |
||||
IR |
23+ |
TO-220 |
50000 |
全新原装正品现货,支持订货 |
IRFB42N20D规格书下载地址
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