HiPerFET Power MOSFETs

N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Features ● International standard packages ● JEDECTO-264 AA,epoxymeet UL94V-0, flammability classification ● miniBLOC with Aluminium nitride isolation ● Low RDS (on) HDMOSTM process ● Rugged polysilicon gate cell structure ● U

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 90A@ TC=25℃ ·Drain Source Voltage : VDSS= 200V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 23mΩ(Max) ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switching applications

N通道HiPerFET

HiPerFET Power MOSFETs

HiPerFET™ Power MOSFETs Q Class N-Channel Enhancement Mode Avalanche Rated Low Qg, High dv/dt,Low trr Features • IXYS advanced low Qg process • International standard packages • Low RDS (on) • Unclamped Inductive Switching (UIS) rated • Fast intrinsic rectifier • Fast switching • Moldi

HiPerFET Power MOSFETs

HiPerFET™ Power MOSFETs Q Class N-Channel Enhancement Mode Avalanche Rated Low Qg, High dv/dt,Low trr Features • IXYS advanced low Qg process • International standard packages • Low RDS (on) • Unclamped Inductive Switching (UIS) rated • Fast intrinsic rectifier • Fast switching • Moldi

N通道HiPerFET

HiPerFETTM Power MOSFETs Q-CLASS

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HiPerFET Power MOSFETs

N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Features ● International standard packages ● JEDECTO-264 AA,epoxymeet UL94V-0, flammability classification ● miniBLOC with Aluminium nitride isolation ● Low RDS (on) HDMOSTM process ● Rugged polysilicon gate cell structure ● U

Power MOSFET(Vdss=200V, Rds(on)max=0.023ohm, Id=98A??

Applications • High frequency DC-DC converters Benefits • Low Gate-to-Drain Charge to Reduce Switching Losses • Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) • Fully Characterized Avalanche Voltage and Current

Power MOSFET(Vdss=200V, Rds(on)max=0.023ohm, Id=98A??

Applications • High frequency DC-DC converters Benefits • Low Gate-to-Drain Charge to Reduce Switching Losses • Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) • Fully Characterized Avalanche Voltage and Current

HEXFET짰Power MOSFET

Applications • High frequency DC-DC converters • Lead-Free Benefits • Low Gate-to-Drain Charge to Reduce Switching Losses • Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) • Fully Characterized Avalanche Voltage and Current

N-Channel MOSFET Transistor

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