HiPerFET™ Power MOSFETs Q Class

N-Channel Enhancement Mode

Avalanche Rated

Low Qg,

High dv/dt,Low trr

Features

• IXYS advanced low Qg process

• International standard packages

• Low RDS (on)

• Unclamped Inductive Switching (UIS) rated

• Fast intrinsic rectifier

• Fast switching

• Molding epoxies meet UL 94 V-0 flammability classification

Advantages

• Easy to mount

• Space savings

• High power density

• S version suitable for surface mounting