isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID= 52A@ TC=25℃ ·Drain Source Voltage- : VDSS= 300V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.06Ω(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC c

N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low t Low Gate Charge and Capacitances

N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Low Gate Charge and Capacitances Features • Low gate charge • International standard packages • EpoxymeetUL94V-0, flammability classification • Low RDS (on) HDMOS™ process • Rugged polysilicon gate cell structure • Avalanche

N-Channel: Power MOSFETs with Fast Intrinsic Diode (HiPerFET™)

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 32A@ TC=25℃ ·Drain Source Voltage : VDSS= 300V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 75mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-D

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID= 52A@ TC=25℃ ·Drain Source Voltage- : VDSS= 300V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 73mΩ(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC co

PolarHT Power MOSFET HiPerFET

N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Features • International standard packages • Fast recovery diode • Avalanche rated • Low package inductance - easy to drive and to protect Advantages • Easy to mount • Space savings • High power density

PolarHTTM HiPerFET Power MOSFET

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Power MOSFETs

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