HiPerFET Power MOSFET

HiPerFET™ Power MOSFET Single Die MOSFET Features • International standard packages • Encapsulating epoxy meets UL 94 V-0, flammability classification • miniBLOC with Aluminium nitride isolation • Low RDS (on) HDMOSTM process • Rugged polysilicon gate cell structure • Unc

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID= 50A@ TC=25℃ ·Drain Source Voltage- : VDSS= 500V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.1Ω(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC co

N-Channel: Power MOSFETs with Fast Intrinsic Diode (HiPerFET™)

500V N-Channel MOSFET

Description These N-Channel enhancement mode power field effect transis tors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. Features • 48A, 500V, RDS(on)= 0.105Ω@VGS= 10 V • Low gate charge ( typical 105 nC) •Low Crss ( typical 45 pF) •Fast switchin

DESIGN/PROCESS CHANGE NOTIFICATION

Description SuperFET®II MOSFET is Fairchild Semiconductor®’s first generation of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance.This advanced technology is tailored to minimize conducti

Wireless Charging Coil Assembly

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500V N-Channel MOSFET

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50Ampere,500Volt N-Channel Planar Process Power MOSFET

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