MOSFET N-CH TO-220

包装：卷带（TR） 描述：MOSFET N-CH TO-220 分立半导体产品 晶体管 - FET，MOSFET - 单个

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID= 32A@ TC=25℃ ·Drain Source Voltage- : VDSS= 500V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.15 Ω(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC

HiPerFET Power MOSFETs

HiPerFET™ Power MOSFETs Q-Class N-Channel Enhancement Mode Avalanche Rated High dv/dt, Low trr, HDMOS™ Family Features • Low profile, high power package • Long creep and strike distances • Easy up-grade path for TO-220 designs • Low RDS (on) low Qg process • Rugged polysilicon gate cel

N-Channel: Power MOSFETs with Fast Intrinsic Diode (HiPerFET™)

Power MOSFET(Vdss=500V, Rds(on)typ.=0.135ohm, Id=32A)

SMPS MOSFET Applications Switch Mode Power Supply (SMPS) Uninterruptible Power Supply High Speed Power Switching Hard Switched and High Frequency Circuits Benefits Low Gate Charge Qg results in Simple Drive Requirement Improved Gate, Avalanche and Dynamic dv/dt Rugg

Power MOSFET(Vdss=500V, Rds(on)typ.=0.135ohm, Id=32A)

SMPS MOSFET Applications Switch Mode Power Supply (SMPS) Uninterruptible Power Supply High Speed Power Switching Hard Switched and High Frequency Circuits Benefits Low Gate Charge Qg results in Simple Drive Requirement Improved Gate, Avalanche and Dynamic dv/dt Rugg

HiPerFET Power MOSFETs ISOPLUS247

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HEXFET짰 Power MOSFET

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HEXFET Power MOSFET

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