PolarHV HiPerFET Power MOSFET

N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Features ● International standard packages ● Unclamped Inductive Switching (UIS) rated ● Low package inductance - easy to drive and to protect Advantages ● Easy to mount ● Space savings ● High power density

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID= 7A@ TC=25℃ ·Drain Source Voltage- : VDSS= 800V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 1.44Ω(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC co

N-Channel: Power MOSFETs with Fast Intrinsic Diode (HiPerFET™)

7.0 Amps, 800 Volts N-CHANNEL POWER MOSFET

DESCRIPTION The UTC 7N80 is an N-channel mode power MOSFET using UTC’s advanced technology to provide costomers with planar stripe and DMOS technology. This technology specializes in allowing a minimum on-state resistance and superior switching performance. It also can withstand high energy pul

Drain Current ID= 7A@ TC=25C

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7A 800V N-channel Enhancement Mode Power MOSFET

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7A 800V N-channel Enhancement Mode Power MOSFET

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7A 800V N-channel Enhancement Mode Power MOSFET

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