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isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID= 90A@ TC=25℃ ·Drain Source Voltage- : VDSS= 200V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 22mΩ(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC co

ISC

无锡固电

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID= 90A@ TC=25℃ ·Drain Source Voltage- : VDSS= 200V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 12.8mΩ(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC

ISC

无锡固电

HiPerFETTM Power MOSFETs Q-CLASS

文件:100.36 Kbytes Page:2 Pages

IXYS

艾赛斯

HiPerFETTM Power MOSFETs Q-CLASS

Littelfuse

力特

N通道 超-超级结MOSFET

Littelfuse

力特

N-Channel Enhancement Mode Avalanche Rated

文件:242.33 Kbytes Page:6 Pages

IXYS

艾赛斯

HiPerFET Power MOSFETs

N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Features ● International standard packages ● JEDECTO-264 AA,epoxymeet UL94V-0, flammability classification ● miniBLOC with Aluminium nitride isolation ● Low RDS (on) HDMOSTM process ● Rugged polysilicon gate cell structure ● U

IXYS

艾赛斯

Power MOSFET(Vdss=200V, Rds(on)max=0.023ohm, Id=98A??

Applications • High frequency DC-DC converters Benefits • Low Gate-to-Drain Charge to Reduce Switching Losses • Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) • Fully Characterized Avalanche Voltage and Current

IRF

Power MOSFET(Vdss=200V, Rds(on)max=0.023ohm, Id=98A??

Applications • High frequency DC-DC converters Benefits • Low Gate-to-Drain Charge to Reduce Switching Losses • Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) • Fully Characterized Avalanche Voltage and Current

IRF

HEXFET짰Power MOSFET

Applications • High frequency DC-DC converters • Lead-Free Benefits • Low Gate-to-Drain Charge to Reduce Switching Losses • Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) • Fully Characterized Avalanche Voltage and Current

IRF

N-Channel MOSFET Transistor

文件:335.35 Kbytes Page:2 Pages

ISC

无锡固电

IXFH90N20产品属性

  • 类型

    描述

  • 型号

    IXFH90N20

  • 制造商

    IXYS

  • 制造商全称

    IXYS Corporation

  • 功能描述

    HiPerFETTM Power MOSFETs Q-CLASS

更新时间:2026-1-5 22:48:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
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24+
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67760
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原厂封装
9800
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