位置：首页 > IC中文资料第2652页 > IXFH36N55Q
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
IXFH36N55Q | isc N-Channel MOSFET Transistor FEATURES ·Drain Current –ID= 36A@ TC=25℃ ·Drain Source Voltage- : VDSS= 550V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.16Ω(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC c | ISC 无锡固电 |   | |
IXFH36N55Q | N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt 文件：171.95 Kbytes Page：4 Pages | IXYS 艾赛斯 | | |
isc N-Channel MOSFET Transistor FEATURES ·Drain Current –ID= 36A@ TC=25℃ ·Drain Source Voltage- : VDSS= 550V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.18Ω(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC c | ISC 无锡固电 | | ||
HiPerFET Power MOSFETs 文件：562.31 Kbytes Page：5 Pages | IXYS 艾赛斯 | | ||
N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt 文件：171.95 Kbytes Page：4 Pages | IXYS 艾赛斯 | |
IXFH36N55Q产品属性
- 类型
描述
- 型号
IXFH36N55Q
- 功能描述
MOSFET 36 Amps 550V 0.16 Rds
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IXYS/艾赛斯 |
24+ |
NA/ |
5380 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
IXYS订货 |
25+23+ |
TO-247 |
42387 |
绝对原装正品全新进口深圳现货 |
|||
IXYS |
25+ |
TO-247 |
12588 |
原装正品,自己库存 假一罚十 |
|||
IXYS |
24+ |
TO-247 |
139 |
||||
IXYS |
20+ |
TO-247 |
36900 |
原装优势主营型号-可开原型号增税票 |
|||
IXYS/艾赛斯 |
22+ |
TO-247 |
25000 |
只做原装进口现货,专注配单 |
|||
IXYS |
23+ |
TO-247 |
8000 |
只做原装现货 |
|||
IXYS |
23+ |
TO-247 |
7000 |
||||
IXYS/艾赛斯 |
2447 |
TO247 |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
|||
IXYS/艾赛斯 |
21+ |
TO247 |
1709 |
IXFH36N55Q规格书下载地址
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DdatasheetPDF页码索引
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