IXFH15N100Q价格

参考价格:¥45.8885

型号:IXFH15N100Q3 品牌:IXYS 备注:这里有IXFH15N100Q多少钱,2026年最近7天走势,今日出价,今日竞价,IXFH15N100Q批发/采购报价,IXFH15N100Q行情走势销售排行榜,IXFH15N100Q报价。
型号 功能描述 生产厂家 企业 LOGO 操作
IXFH15N100Q

HiPerFET Power MOSFETs Q-Class

N-Channel Enhancement Mode Avalanche Rated, Low Qg,High dv/dt Features • IXYS advanced low Qg process • International standard packages • Epoxy meet UL 94 V-0, flammability classification • Low RDS (on) low Qg • Avalanche energy and current rated • Fast intrinsic rectifier Advantages • Ea

IXYS

艾赛斯

IXFH15N100Q

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 15A@ TC=25℃ ·Drain Source Voltage : VDSS= 1000V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.7Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-

ISC

无锡固电

IXFH15N100Q

N通道HiPerFET

LITTELFUSE

力特

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 15A@ TC=25℃ ·Drain Source Voltage : VDSS= 1000V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.7Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-

ISC

无锡固电

N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family

Features ● International standard packages ● Low RDS (on) HDMOSTM process ● Rugged polysilicon gate cell structure ● Unclamped Inductive Switching (UIS) rated ● Low package inductance - easy to drive and to protect ● Fast intrinsic Rectifier Applications ● DC-DC converters ● Battery c

IXYS

艾赛斯

HiperFETTM Power MOSFETs Q3-Class

N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier Features • Low Intrinsic Gate Resistance • International Standard Packages • Low Package Inductance • Fast Intrinsic Rectifier • Low RDS(on) and QG Advantages • High Power Density • Easy to Mount • Space Savings Applic

IXYS

艾赛斯

isc N-Channel MOSFET Transistor

·FEATURES ·Drain Source Voltage- : VDSS=1000V(Min) ·Static Drain-Source On-Resistance : RDS(on) =1.0Ω(Max) ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications

ISC

无锡固电

N通道HiPerFET

LITTELFUSE

力特

N-Channel Enhancement Mode MOSFET

文件:218.84 Kbytes Page:4 Pages

DACO

罡境电子

N-Channel Enhancement Mode MOSFET

文件:233.38 Kbytes Page:4 Pages

DACO

罡境电子

N-Channel Enhancement Mode MOSFET

文件:238.58 Kbytes Page:4 Pages

DACO

罡境电子

IXFH15N100Q产品属性

  • 类型

    描述

  • 型号

    IXFH15N100Q

  • 功能描述

    MOSFET 15 Amps 1000V 0.725 Rds

  • RoHS

  • 制造商

    STMicroelectronics

  • 晶体管极性

    N-Channel

  • 汲极/源极击穿电压

    650 V

  • 闸/源击穿电压

    25 V

  • 漏极连续电流

    130 A 电阻汲极/源极

  • RDS(导通)

    0.014 Ohms

  • 配置

    Single

  • 安装风格

    Through Hole

  • 封装/箱体

    Max247

  • 封装

    Tube

更新时间:2026-1-30 9:30:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
IXYS/艾赛斯
23+
TO-247
12300
原厂授权一级代理,专业海外优势订货,价格优势、品种
IXYS/艾赛斯
23+
TO-247
50000
全新原装正品现货,支持订货
LITTELFUSE/力特
2019+
DIP
30000
原装现货
VBSEMI/微碧半导体
24+
TO-247
7800
全新原厂原装正品现货,低价出售,实单可谈
IXYS
23+
TO-3P
60606
##公司主营品牌长期供应100%原装现货可含税提供技术
IXYS/艾赛斯
25+
TO-247
32360
IXYS/艾赛斯全新特价IXFH15N100Q即刻询购立享优惠#长期有货
IXYS(艾赛斯)
25+
N/A
7500
IXYS(艾赛斯)全系列在售
VBSEMI/微碧半导体
24+
TO-247
60000
IXYS/Littelfuse
23+
TO-247
15800
全新原装正品现货直销
APPDEFAUL
23+
NA
7000

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