PolarHV HiPerFET Power MOSFET

N-Channel Enhancement Mode Features International standard packages Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect Advantages Easy to mount Space savings High power density

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 12A@ TC=25℃ ·Drain Source Voltage : VDSS= 800V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.85Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-

800V N-Channel Planar MOSFET

Features RDSON=0.64Ω @Vgs=10V, Id=6A Low gate Charge(typical 58.2nC) Low Crss (typical 6.5pF) Fast switching capability 100% avalanche tested Improved dv/dt capability Halogen free and RoHS compliant Applications Switch Mode Power Supply Uninterruptible Power Supply (UPS) TV Power

12A, 800V N-CHANNEL POWER MOSFET

DESCRIPTION The UTC 12N80 is an N-channel enhancement mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology is specialized in allowing a minimum on-state resistance and superior switching performance. It also can withstand h

N-Channel Enhancement Mode MOSFET

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N-Channel Enhancement Mode MOSFET

文件：232.93 Kbytes Page：4 Pages

800V N-Channel MOSFET

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