HiPerFET MOSFETs ISOPLUS220

Electrically Isolated Back Surface N-Channel Enhancement Mode High dV/dt, Low trr, HDMOS™ Family Features Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation
Low drain to tab capacitance(

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 21A@ TC=25℃ ·Drain Source Voltage : VDSS= 500V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.23Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-

N-Channel: Power MOSFETs with Fast Intrinsic Diode (HiPerFET™)

24 Amps, 500 Volts N-CHANNEL POWER MOSFET

DESCRIPTION The UTC24N50 is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology allows a minimum on-state resistance and superior switching performance. It also can withstand high energy pulse in the avalanc

N-Channel MOSFET 500V, 24A, 0.19廓

Description UniFET™ MOSFET is Fairchild Semiconductor®’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength. This device family is suitable f

24A, 500V N-CHANNEL POWER MOSFET

文件：213.36 Kbytes Page：6 Pages

Fast Switching

文件：49.82 Kbytes Page：2 Pages

24A竊?00V N-CHANNEL MOSFET

文件：290.67 Kbytes Page：5 Pages