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IXFB80N50Q价格
参考价格：￥126.2789
型号：IXFB80N50Q2 品牌：IXYS 备注：这里有IXFB80N50Q多少钱，2024年最近7天走势，今日出价，今日竞价，IXFB80N50Q批发/采购报价，IXFB80N50Q行情走势销售排行榜，IXFB80N50Q报价。| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
HiPerFETPowerMOSFETsQ-Class 文件：172.61 Kbytes Page：2 Pages | IXYS IXYS Integrated Circuits Division |  |   | |
HiPerFETPowerMOSFETs 文件：131.69 Kbytes Page：4 Pages | IXYS IXYS Integrated Circuits Division | | | |
HiPerFETPowerMOSFETsSingleDieMOSFET HiPerFETPowerMOSFETsSingleDieMOSFET N-ChannelEnhancementMode AvalancheRated,Highdv/dt,Lowtrr Features •ConformstoSOT-227Boutline •LowRDS(on)HDMOSTMprocess •Ruggedpolysilicongatecellstructure •UnclampedInductiveSwitching(UIS)rated •Lowpackageinductance •F | IXYS IXYS Integrated Circuits Division | | | |
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=80A@TC=25℃ ·DrainSourceVoltage :VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=65mΩ(Max) ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APPLICATIONS ·Switchingapplications | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 |  | | |
HiPerFETPowerMOSFETsSingleDieMOSFET N-ChannelEnhancementModeAvalancheRated,Highdv/dt,Lowtrr Features •Internationalstandardpackages •miniBLOC,withAluminiumnitrideisolation •LowRDS(on)HDMOSTMprocess •Ruggedpolysilicongatecellstructure •UnclampedInductiveSwitching(UIS)rated •Lowpackageinductanc | IXYS IXYS Integrated Circuits Division | | | |
HiPerFETPowerMOSFETsSingleDieMOSFET N-ChannelEnhancementModeAvalancheRated,Highdv/dt,Lowtrr Features •Internationalstandardpackages •miniBLOC,withAluminiumnitrideisolation •LowRDS(on)HDMOSTMprocess •Ruggedpolysilicongatecellstructure •UnclampedInductiveSwitching(UIS)rated •Lowpackageinductanc | IXYS IXYS Integrated Circuits Division | | | |
PolarHVHiPerFETPowerMOSFET 文件：235.65 Kbytes Page：5 Pages | IXYS IXYS Integrated Circuits Division | | |
IXFB80N50Q产品属性
- 类型
描述
- 型号
IXFB80N50Q
- 功能描述
MOSFET 80 Amps 500V 0.06 Rds
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IXYS/艾赛斯 |
23+ |
TO-264 PLUS |
65000 |
原装正品 华强现货 |
|||
23+ |
N/A |
98000 |
一级代理放心采购 |
||||
IXYS |
20+ |
PLUS264 |
36900 |
原装优势主营型号-可开原型号增税票 |
|||
IXYS/艾赛斯 |
21+ROHS |
PLUS264 |
9329 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
|||
IXYS |
2023+ |
PLUS264 |
5800 |
进口原装,现货热卖 |
|||
IXYS/艾赛斯 |
23+ |
TO264 |
50000 |
全新原装正品现货,支持订货 |
|||
IXYS |
23+ |
SMD |
71157 |
原装正品实单可谈 库存现货 |
|||
IXYS(艾赛斯) |
23+ |
N/A |
7500 |
IXYS(艾赛斯)全系列在售 |
|||
IXYS |
23+ |
PLUS264 |
12300 |
全新原装真实库存含13点增值税票! |
|||
IXYS |
2023+ |
SOP-16 |
16800 |
芯为科技只有原装 |
IXFB80N50Q芯片相关品牌
IXFB80N50Q规格书下载地址
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进口代理
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代理渠道供应全新原装IXFH34N65X2-IXYS场效应管
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可立即发货
2019-9-24
DdatasheetPDF页码索引
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