HiPerFET Power MOSFETs Single Die MOSFET

N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Features • International standard packages • miniBLOC, with Aluminium nitride isolation • Low RDS (on) HDMOSTM process • Rugged polysilicon gate cell structure • Unclamped Inductive Switching (UIS) rated • Low package inductanc

HiPerFET Power MOSFETs Single Die MOSFET

N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Features • International standard packages • miniBLOC, with Aluminium nitride isolation • Low RDS (on) HDMOSTM process • Rugged polysilicon gate cell structure • Unclamped Inductive Switching (UIS) rated • Low package inductanc

N-Channel MOSFET

DESCRIPTION · Drain Current -ID= 80A@ TC=25℃ · Drain Source Voltage -VDSS= 500V(Min) · Static Drain-Source On-Resistance -RDS(on) = 55Ω(Max)@VGS= 10V APPLICATIONS · DC-DC converter · Battery Chargers · High speed power switch

PolarHV HiPerFET Power MOSFET

N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Features • Fast intrinsic diode • International standard package • Unclamped Inductive Switching (UIS) rated • UL recognized. • Isolated mounting base Advantages • Easy to mount • Space savings • High power density

HiPerFET Power MOSFET Q2-Class

N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic Rg, High dV/dt, Low trr Features • Double metal process for low gate resistance • miniBLOC, with Aluminium nitride isolation • Unclamped Inductive Switching (UIS) rated • Low package inductance • Fast intrinsic Rectifier Ap

HiperFET Power MOSFET Q3-Class

VDSS = 500V ID25 = 63A RDS(on) ≤ 65mΩ trr ≤ 250ns N-Channel Enhancement Mode Fast Intrinsic Rectifier Features International Standard Package Low Intrinsic Gate Resistance miniBLOC with Aluminum Nitride Isolation Low Package Inductance Fast Intrinsic Rectif

Power MOSFET

文件：174.05 Kbytes Page：5 Pages

Power MOSFET

文件：174.05 Kbytes Page：5 Pages

HiPerFET Power MOSFETs Single Die MOSFET

HiPerFET Power MOSFETs Single Die MOSFET N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Features • Conforms to SOT-227B outline • Low RDS (on) HDMOSTM process • Rugged polysilicon gate cell structure • Unclamped Inductive Switching (UIS) rated • Low package inductance • F

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 80A@ TC=25℃ ·Drain Source Voltage : VDSS= 500V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 65mΩ(Max) ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switching applications

PolarHV HiPerFET Power MOSFET

文件：235.65 Kbytes Page：5 Pages