HiPerFETPowerMOSFETs

Features ●Internationalstandardpackage ●LowRDS(on) ●RatedforunclampedInductiveload Switching(UIS) Advantages ●Easytomount ●Spacesavings ●Highpowerdensity

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=3.6A@TC=25℃ ·DrainSourceVoltage :VDSS=800V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=3.6Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-

2.5Amps,800VoltsN-CHANNELPOWERMOSFET

DESCRIPTION TheUTC3N80provideexcellentRDS(ON),lowgatechargeandoperationwithlowgatevoltages.ThisdeviceissuitableforuseasaloadswitchorinPWMapplications. FEATURES *RDS(ON)=3.8Ω@VGS=10V *UltraLowGateCharge(typical19nC) *LowReverseTransfer

3Amps,800VoltsN-CHANNELPOWERMOSFET

文件：210.29 Kbytes Page：6 Pages

N-ChannelPowerMOSFET

文件：398.32 Kbytes Page：8 Pages

FastSwitching

文件：49.87 Kbytes Page：2 Pages

3Amps,800VoltsN-CHANNELPOWERMOSFET

文件：222.92 Kbytes Page：6 Pages