HiPerFET Power MOSFETs

Features ● International standard package ● Low RDS(on) ● Rated for unclamped Inductive load Switching (UIS) Advantages ● Easy to mount ● Space savings ● High power density

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 3.6A@ TC=25℃ ·Drain Source Voltage : VDSS= 800V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 3.6Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-

N-Channel: Power MOSFETs with Fast Intrinsic Diode (HiPerFET™)

2.5 Amps, 800 Volts N-CHANNEL POWER MOSFET

DESCRIPTION The UTC 3N80provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. FEATURES * RDS(ON)=3.8Ω@VGS=10 V * Ultra Low Gate Charge ( typical 19 nC ) * Low Reverse Transfer

3 Amps, 800 Volts N-CHANNEL POWER MOSFET

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N-Channel Power MOSFET

文件：398.32 Kbytes Page：8 Pages

Fast Switching

文件：49.87 Kbytes Page：2 Pages

3 Amps, 800 Volts N-CHANNEL POWER MOSFET

文件：222.92 Kbytes Page：6 Pages