型号 功能描述 生产厂家 企业 LOGO 操作
IXFA16N50P3

N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier

Polar3 ™ HiPerFET™ Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier Features • International Standard Packages • Fast Intrinsic Rectifier • Avalanche Rated • Low RDS(ON) and QG • Low Package Inductance Advantages • High Power Density • Easy to Mount • Sp

IXYS

艾赛斯

IXFA16N50P3

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 16A@ TC=25℃ ·Drain Source Voltage : VDSS= 500V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.36Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-

ISC

无锡固电

IXFA16N50P3

N通道HiPerFET

Littelfuse

力特

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 16A@ TC=25℃ ·Drain Source Voltage : VDSS= 500V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.36Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-

ISC

无锡固电

N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier

Polar3 ™ HiPerFET™ Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier Features • International Standard Packages • Fast Intrinsic Rectifier • Avalanche Rated • Low RDS(ON) and QG • Low Package Inductance Advantages • High Power Density • Easy to Mount • Sp

IXYS

艾赛斯

N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier

Polar3 ™ HiPerFET™ Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier Features • International Standard Packages • Fast Intrinsic Rectifier • Avalanche Rated • Low RDS(ON) and QG • Low Package Inductance Advantages • High Power Density • Easy to Mount • Sp

IXYS

艾赛斯

IXFA16N50P3产品属性

  • 类型

    描述

  • 型号

    IXFA16N50P3

  • 功能描述

    MOSFET Polar3 HiPerFET Power MOSFET

  • RoHS

  • 制造商

    STMicroelectronics

  • 晶体管极性

    N-Channel

  • 汲极/源极击穿电压

    650 V

  • 闸/源击穿电压

    25 V

  • 漏极连续电流

    130 A 电阻汲极/源极

  • RDS(导通)

    0.014 Ohms

  • 配置

    Single

  • 安装风格

    Through Hole

  • 封装/箱体

    Max247

  • 封装

    Tube

更新时间:2026-1-1 20:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
IXYS/艾赛斯
22+
TO-263-2
100000
代理渠道/只做原装/可含税
IXYS/艾赛斯
24+
NA/
9750
原装现货,当天可交货,原型号开票
IXYS
23+
TO-263
7000
原装正品
23+
TO-263-3
60590
##公司主营品牌长期供应100%原装现货可含税提供技术
IXYS
10+
TO-263
6500
一级代理,专注军工、汽车、医疗、工业、新能源、电力
IXYS
原厂封装
9800
原装进口公司现货假一赔百
NK/南科功率
2025+
TO-263-2
986966
国产
IXYS/艾赛斯
24+
TO-263
60000
IXYS
23+
TO-263
50000
全新原装正品现货,支持订货
IXYS/Littelfuse
22+
TO-263
15800
全新原装正品现货直销

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