位置：首页 > IC中文资料第10818页 > IXFA16N50P3
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
IXFA16N50P3 | N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier Polar3 ™ HiPerFET™ Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier Features • International Standard Packages • Fast Intrinsic Rectifier • Avalanche Rated • Low RDS(ON) and QG • Low Package Inductance Advantages • High Power Density • Easy to Mount • Sp | IXYS 艾赛斯 |   | |
IXFA16N50P3 | isc N-Channel MOSFET Transistor FEATURES ·Drain Current : ID= 16A@ TC=25℃ ·Drain Source Voltage : VDSS= 500V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.36Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC- | ISC 无锡固电 | | |
isc N-Channel MOSFET Transistor FEATURES ·Drain Current : ID= 16A@ TC=25℃ ·Drain Source Voltage : VDSS= 500V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.36Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC- | ISC 无锡固电 | | ||
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier Polar3 ™ HiPerFET™ Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier Features • International Standard Packages • Fast Intrinsic Rectifier • Avalanche Rated • Low RDS(ON) and QG • Low Package Inductance Advantages • High Power Density • Easy to Mount • Sp | IXYS 艾赛斯 | | ||
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier Polar3 ™ HiPerFET™ Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier Features • International Standard Packages • Fast Intrinsic Rectifier • Avalanche Rated • Low RDS(ON) and QG • Low Package Inductance Advantages • High Power Density • Easy to Mount • Sp | IXYS 艾赛斯 | |
IXFA16N50P3产品属性
- 类型
描述
- 型号
IXFA16N50P3
- 功能描述
MOSFET Polar3 HiPerFET Power MOSFET
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IXYS/艾赛斯 |
24+ |
NA/ |
9750 |
原装现货,当天可交货,原型号开票 |
|||
Littelfuse/IXYS |
24+ |
TO263 |
7350 |
现货供应,当天可交货!免费送样,原厂技术支持!!! |
|||
IXYS/艾赛斯 |
22+ |
TO-263-2 |
100000 |
代理渠道/只做原装/可含税 |
|||
IXYS/艾赛斯 |
2022+ |
TO-263 |
30000 |
进口原装现货供应,原装 假一罚十 |
|||
原装正品 |
23+ |
TO-263-3 |
60590 |
##公司主营品牌长期供应100%原装现货可含税提供技术 |
|||
IXYS |
10+ |
TO-263 |
6500 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
IXYS/Littelfuse |
22+ |
TO-263 |
15800 |
全新原装正品现货直销 |
|||
IXYS |
23+ |
TO-263 |
50000 |
全新原装正品现货,支持订货 |
|||
IXYS/艾赛斯 |
23+ |
TO-263 |
10000 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
|||
24+ |
N/A |
51000 |
一级代理-主营优势-实惠价格-不悔选择 |
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进口代理
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IXDD614YI，全新原装当天发货或门市自取0755-82732291.
2020-6-16IXFH34N65X2深圳市光华微科技有限公司18138231376
代理渠道供应全新原装IXFH34N65X2-IXYS场效应管
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可立即发货
2019-9-24
DdatasheetPDF页码索引
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