位置：首页 > IC中文资料第3570页 > IXFH16N50P3
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
IXFH16N50P3 | N-ChannelEnhancementModeAvalancheRatedFastIntrinsicRectifier Polar3™HiPerFET™PowerMOSFET N-ChannelEnhancementModeAvalancheRated FastIntrinsicRectifier Features •InternationalStandardPackages •FastIntrinsicRectifier •AvalancheRated •LowRDS(ON)andQG •LowPackageInductance Advantages •HighPowerDensity •EasytoMount •Sp | IXYS IXYS Integrated Circuits Division |  |   |
IXFH16N50P3 | iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=16A@TC=25℃ ·DrainSourceVoltage :VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.36Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC- | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 |  | |
N-ChannelEnhancementModeAvalancheRatedFastIntrinsicRectifier Polar3™HiPerFET™PowerMOSFET N-ChannelEnhancementModeAvalancheRated FastIntrinsicRectifier Features •InternationalStandardPackages •FastIntrinsicRectifier •AvalancheRated •LowRDS(ON)andQG •LowPackageInductance Advantages •HighPowerDensity •EasytoMount •Sp | IXYS IXYS Integrated Circuits Division | | | |
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=16A@TC=25℃ ·DrainSourceVoltage :VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.36Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC- | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | | |
N-ChannelEnhancementModeAvalancheRatedFastIntrinsicRectifier Polar3™HiPerFET™PowerMOSFET N-ChannelEnhancementModeAvalancheRated FastIntrinsicRectifier Features •InternationalStandardPackages •FastIntrinsicRectifier •AvalancheRated •LowRDS(ON)andQG •LowPackageInductance Advantages •HighPowerDensity •EasytoMount •Sp | IXYS IXYS Integrated Circuits Division | | |
IXFH16N50P3产品属性
- 类型
描述
- 型号
IXFH16N50P3
- 功能描述
MOSFET Polar3 HiPerFET Power MOSFET
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IXYS |
08+ |
TO-247 |
110 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
IXYS/艾赛斯 |
24+ |
TO247 |
58000 |
全新原厂原装正品现货,可提供技术支持、样品免费! |
|||
IXYS(艾赛斯) |
23+ |
N/A |
7500 |
IXYS(艾赛斯)全系列在售 |
|||
IXYS |
23+ |
TO247AD |
6000 |
||||
IXYS/艾赛斯 |
22+21+ |
TO247 |
13888 |
16年电子元件现货供应商 终端BOM表可配单提供样品 |
|||
ixys |
2023+ |
TO-247 |
80000 |
一级代理/分销渠道价格优势 十年芯程一路只做原装正品 |
|||
VBSEMI |
19+ |
TO-247 |
29600 |
绝对原装现货,价格优势! |
|||
IXYS |
TO247 |
68900 |
原包原标签100%进口原装常备现货! |
||||
IXYS/艾赛斯 |
23+ |
NA/ |
17138 |
原装现货,当天可交货,原型号开票 |
|||
IXYS-艾赛斯 |
24+25+/26+27+ |
TO-247-3 |
6328 |
一一有问必回一特殊渠道一有长期订货一备货HK仓库 |
IXFH16N50P3芯片相关品牌
IXFH16N50P3规格书下载地址
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代理渠道供应全新原装IXFH34N65X2-IXYS场效应管
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可立即发货
2019-9-24
DdatasheetPDF页码索引
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