PolarHV HiperFET Power MOSFET

N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Features ◆ International standard packages ◆ Avalanche rated Advantages ◆ Easy to mount ◆ Space savings ◆ High power density Applications: ◆ Switched-mode and resonant-mode power supplies ◆ DC-DC Converters ◆ Laser Driver

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 14A@ TC=25℃ ·Drain Source Voltage : VDSS= 600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.55Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-

N通道HiPerFET MOSFET

Power MOSFET

文件：338.44 Kbytes Page：7 Pages

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 14A@ TC=25℃ ·Drain Source Voltage : VDSS= 600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.54Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-

Power MOSFET

文件：338.44 Kbytes Page：7 Pages

N通道HiPerFET

N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier

文件：282.67 Kbytes Page：6 Pages

14A, 600V N-CHANNEL POWER MOSFET

FEATURES * RDS(ON) ≤ 0.55 Ω @ VGS=10V, ID=7.0A * Fast switching capability * Avalanche energy tested * Improved dv/dt capability, high ruggedness

14A, 600V N-CHANNEL POWER MOSFET

 FEATURES * RDS(ON) ≤ 0.6Ω @ VGS=10V, ID=7.0A * Fast switching capability * Avalanche energy specified * Improved dv/dt capability, high ruggedness

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID =14A@ TC=25℃ ·Drain Source Voltage : VDSS= 600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.49Ω(Max) @VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC

Drain Current ID= 14A@ TC=25C

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N-Channel Enhancement Mode MOSFET

文件：249.73 Kbytes Page：4 Pages