封装/外壳：TO-268-3，D³Pak（2 引线 + 接片），TO-268AA 包装：托盘 描述：IXBT42N170 TRL 分立半导体产品 晶体管 - UGBT、MOSFET - 单

BIMOSFET Monolithic Bipolar MOS Transistor

Features • High Blocking Voltage • JEDEC TO-268 surface and JEDEC TO-247 AD • Fast switching • High current handling capability • MOS Gate turn-on - drive simplicity • Molding epoxies meet UL 94 V-0 flammability classification Applications • AC motor speed control

High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor

VCES = 1700 V IC25 = 75 A VCE(sat) = 3.3 V Features • High Blocking Voltage • JEDEC TO-268 surface and JEDEC TO-247 AD • Low conduction losses • High current handling capability • MOS Gate turn-on - drive simplicity • Molding epoxies meet UL 94 V-0 flammability classification Applicatio

BIMOSFET Monolithic Bipolar MOS Transistor

Features • High Blocking Voltage • JEDEC TO-268 surface and JEDEC TO-247 AD • Fast switching • High current handling capability • MOS Gate turn-on - drive simplicity • Molding epoxies meet UL 94 V-0 flammability classification Applications • AC motor speed control

High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor

Features • International Standard Package • miniBLOC, with Aluminium Nitride Isolation • Square RBSOA • 2500V~ Isolation Voltage • High Blocking Voltage • International Standard Package • Anti-Parallel Diode • Low Conduction Losses Advantages • Low Gate Drive Requirement • High Power De

High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor

Features ● Silicon chip on Direct-Copper Bond (DCB) substrate ● Isolated mounting surface ● 2500V electrical isolation Advantages ● Low gate drive requirement ● High power density Applications: ● Switched-mode and resonant-mode power supplies ● Uninterruptible power supplies (UPS) ● Lase