BIMOSFET Monolithic Bipolar MOS Transistor

Features • High Blocking Voltage • JEDEC TO-268 surface and JEDEC TO-247 AD • Fast switching • High current handling capability • MOS Gate turn-on - drive simplicity • Molding epoxies meet UL 94 V-0 flammability classification Applications • AC motor speed control

BiMOSFET™ 高电压

• 高阻断电压\n• 高功率密度\n• 高电流处理能力\n• 低传导损耗\n• MOS栅极开启简单便捷\n• 国际标准和专有ISOPLUSTM封装;

封装/外壳：TO-247-3 包装：管件 描述：IGBT 1700V 42A 357W TO247 分立半导体产品 晶体管 - UGBT、MOSFET - 单

High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor

VCES = 1700 V IC25 = 75 A VCE(sat) = 3.3 V Features • High Blocking Voltage • JEDEC TO-268 surface and JEDEC TO-247 AD • Low conduction losses • High current handling capability • MOS Gate turn-on - drive simplicity • Molding epoxies meet UL 94 V-0 flammability classification Applicatio

High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor

Features • International Standard Package • miniBLOC, with Aluminium Nitride Isolation • Square RBSOA • 2500V~ Isolation Voltage • High Blocking Voltage • International Standard Package • Anti-Parallel Diode • Low Conduction Losses Advantages • Low Gate Drive Requirement • High Power De

High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor

Features ● Silicon chip on Direct-Copper Bond (DCB) substrate ● Isolated mounting surface ● 2500V electrical isolation Advantages ● Low gate drive requirement ● High power density Applications: ● Switched-mode and resonant-mode power supplies ● Uninterruptible power supplies (UPS) ● Lase

BIMOSFET Monolithic Bipolar MOS Transistor

Features • High Blocking Voltage • JEDEC TO-268 surface and JEDEC TO-247 AD • Fast switching • High current handling capability • MOS Gate turn-on - drive simplicity • Molding epoxies meet UL 94 V-0 flammability classification Applications • AC motor speed control