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| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
IXBT42N170A | BIMOSFETMonolithicBipolarMOSTransistor Features •HighBlockingVoltage •JEDECTO-268surfaceandJEDECTO-247AD •Fastswitching •Highcurrenthandlingcapability •MOSGateturn-on -drivesimplicity •MoldingepoxiesmeetUL94V-0flammabilityclassification Applications •ACmotorspeedcontrol | IXYS IXYS Integrated Circuits Division |  |   |
HighVoltage,HighGainBIMOSFETTMMonolithicBipolarMOSTransistor VCES=1700V IC25=75A VCE(sat)=3.3V Features •HighBlockingVoltage •JEDECTO-268surfaceandJEDECTO-247AD •Lowconductionlosses •Highcurrenthandlingcapability •MOSGateturn-on -drivesimplicity •MoldingepoxiesmeetUL94V-0flammabilityclassification Applicatio | IXYS IXYS Integrated Circuits Division | | | |
BIMOSFETMonolithicBipolarMOSTransistor Features •HighBlockingVoltage •JEDECTO-268surfaceandJEDECTO-247AD •Fastswitching •Highcurrenthandlingcapability •MOSGateturn-on -drivesimplicity •MoldingepoxiesmeetUL94V-0flammabilityclassification Applications •ACmotorspeedcontrol | IXYS IXYS Integrated Circuits Division | | | |
HighVoltage,HighGainBIMOSFETTMMonolithicBipolarMOSTransistor Features •InternationalStandardPackage •miniBLOC,withAluminiumNitrideIsolation •SquareRBSOA •2500V~IsolationVoltage •HighBlockingVoltage •InternationalStandardPackage •Anti-ParallelDiode •LowConductionLosses Advantages •LowGateDriveRequirement •HighPowerDe | IXYS IXYS Integrated Circuits Division | | | |
HighVoltage,HighGainBIMOSFETTMMonolithicBipolarMOSTransistor Features ●SiliconchiponDirect-CopperBond(DCB)substrate ●Isolatedmountingsurface ●2500Velectricalisolation Advantages ●Lowgatedriverequirement ●Highpowerdensity Applications: ●Switched-modeandresonant-modepowersupplies ●Uninterruptiblepowersupplies(UPS) ●Lase | IXYS IXYS Integrated Circuits Division | | |
IXBT42N170A产品属性
- 类型
描述
- 型号
IXBT42N170A
- 功能描述
IGBT 晶体管
- RoHS
否
- 制造商
Fairchild Semiconductor
- 配置
集电极—发射极最大电压
- VCEO
650 V
- 集电极—射极饱和电压
2.3 V
- 栅极/发射极最大电压
20 V 在25
- C的连续集电极电流
150 A
- 栅极—射极漏泄电流
400 nA
- 功率耗散
187 W
- 封装/箱体
TO-247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IXYS/艾赛斯 |
23+ |
TO-268 |
90000 |
只做原厂渠道价格优势可提供技术支持 |
|||
N/A |
21+ |
N/A |
606 |
全新原装亏本出13157115792 |
|||
Littelfuse/IXYS |
23+ |
TO268 |
7350 |
现货供应,当天可交货!免费送样,原厂技术支持!!! |
|||
IXYS |
23+ |
TO-268 |
10868 |
全新原装 |
|||
IXYS |
23+ |
DIP18 |
6000 |
15年原装正品企业 |
|||
IXYS-艾赛斯 |
24+25+/26+27+ |
TO-268 |
2368 |
一一有问必回一特殊渠道一有长期订货一备货HK仓库 |
|||
IXYS |
22+ |
TO268 |
9000 |
原厂渠道,现货配单 |
|||
IXYS |
08+(pbfree) |
TO-268 |
8866 |
||||
IXYS |
23+ |
TO268 |
9000 |
原装正品，支持实单 |
|||
IXYS |
24+ |
TO-268-3,D?Pak(2 引线 + 接片 |
9350 |
独立分销商,公司只做原装,诚心经营,免费试样正品保证 |
IXBT42N170A芯片相关品牌
IXBT42N170A规格书下载地址
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具有350V达林顿晶体管的低压误差放大器–IX9915系列 IXYS集成电路在具有350V达林顿晶体管的误差放大器中提供多功能产品设计
2020-4-10
DdatasheetPDF页码索引
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