封装/外壳：TO-268-3，D³Pak（2 引线 + 接片），TO-268AA 包装：管件 描述：IGBT 3000V 80A 400W TO268 分立半导体产品 晶体管 - UGBT、MOSFET - 单

High Voltage, High Gain BIMOSFET Monolithic Bipolar MOS Transistor

Features • High Blocking Voltage • High Voltage Packages • Low Conduction Losses Advantages • Low Gate Drive Requirement • High Power Density Applications: • Switched-Mode and Resonant-Mode Power Supplies • Uninterruptible Power Supplies (UPS) • Laser Generators • Capacitor Discharge Ci

封装/外壳：TO-268-3，D³Pak（2 引线 + 接片），TO-268AA 包装：卷带（TR） 描述：IGBT 3000V 80A 400W TO268 分立半导体产品 晶体管 - UGBT、MOSFET - 单

High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor

Features • Silicon Chip on Direct-Copper Bond (DCB) Substrate • Isolated Mounting Surface • 3000V Electrical Isolation • High Blocking Voltage • International Standard Package • Low Conduction Losses Advantages • Low Gate Drive Requirement • High Power Density Applications: • Switched-M

High Voltage, High Gain BIMOSFET Monolithic Bipolar MOS Transistor

Features • High Blocking Voltage • High Voltage Packages • Low Conduction Losses Advantages • Low Gate Drive Requirement • High Power Density Applications: • Switched-Mode and Resonant-Mode Power Supplies • Uninterruptible Power Supplies (UPS) • Laser Generators • Capacitor Discharge Ci

Preliminary Technical Information

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