High Voltage, High Gain BIMOSFET Monolithic Bipolar MOS Transistor

Features • High Blocking Voltage • High Voltage Packages • Low Conduction Losses Advantages • Low Gate Drive Requirement • High Power Density Applications: • Switched-Mode and Resonant-Mode Power Supplies • Uninterruptible Power Supplies (UPS) • Laser Generators • Capacitor Discharge Ci

封装/外壳：TO-247-3 变式 包装：卷带（TR） 描述：DISC IGBT BIMSFT-VERYHIVOLT TO-2 分立半导体产品 晶体管 - UGBT、MOSFET - 单

BiMOSFET™ 超高电压

Preliminary Technical Information

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High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor

Features • Silicon Chip on Direct-Copper Bond (DCB) Substrate • Isolated Mounting Surface • 3000V Electrical Isolation • High Blocking Voltage • International Standard Package • Low Conduction Losses Advantages • Low Gate Drive Requirement • High Power Density Applications: • Switched-M

High Voltage, High Gain BIMOSFET Monolithic Bipolar MOS Transistor

Features • High Blocking Voltage • High Voltage Packages • Low Conduction Losses Advantages • Low Gate Drive Requirement • High Power Density Applications: • Switched-Mode and Resonant-Mode Power Supplies • Uninterruptible Power Supplies (UPS) • Laser Generators • Capacitor Discharge Ci