位置：首页 > IC中文资料 > IXBT16N170AHV
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
IXBT16N170AHV | HighVoltage,HighGainBIMOSFETTMMonolithicBipolarMOSTransistor Features •HighVoltagePackage •HighBlockingVoltage •Anti-ParallelDiode •LowConductionLosses Advantages •LowGateDriveRequirement •HighPowerDensity Applications: •Switch-ModeandResonant-ModePowerSupplies •UninterruptiblePowerSupplies(UPS) •LaserGenerators •Ca | IXYS IXYS Integrated Circuits Division |  |   |
IXBT16N170AHV | 封装/外壳：TO-268-3，D³Pak（2 引线 + 接片），TO-268AA 包装：托盘 描述：IGBT 分立半导体产品 晶体管 - UGBT、MOSFET - 单 | IXYS IXYS Integrated Circuits Division | | |
HighVoltage,HighGainBIMOSFETTMMonolithicBipolarMOSTransistor Features •HighBlockingVoltage •JEDECTO-268surfaceandJEDECTO-247AD •Lowconductionlosses •Highcurrenthandlingcapability •MOSGateturn-on -drivesimplicity •MoldingepoxiesmeetUL94V-0 flammabilityclassification Applications •ACmotorspeedcontrol •Uninter | IXYS IXYS Integrated Circuits Division | | | |
HighVoltage,HighGainBIMOSFETMonolithicBipolarMOSTransistor Features •Monolithicfastreversediode •HighBlockingVoltage •JEDECTO-268surfacemountandJEDECTO-247ADpackages •Lowswitchinglosses •Highcurrenthandlingcapability •MOSGateturn-on -drivesimplicity •MoldingepoxiesmeetUL94V-0 flammabilityclassification Appl | IXYS IXYS Integrated Circuits Division | | | |
HighVoltage,HighGainBIMOSFETTMMonolithicBipolarMOSTransistor Features •HighVoltagePackage •HighBlockingVoltage •Anti-ParallelDiode •LowConductionLosses Advantages •LowGateDriveRequirement •HighPowerDensity Applications: •Switch-ModeandResonant-ModePowerSupplies •UninterruptiblePowerSupplies(UPS) •LaserGenerators •Ca | IXYS IXYS Integrated Circuits Division | | | |
HighVoltage,HighGainBIMOSFETTMMonolithicBipolarMOSTransistor Features •HighBlockingVoltage •JEDECTO-268surfaceandJEDECTO-247AD •Lowconductionlosses •Highcurrenthandlingcapability •MOSGateturn-on -drivesimplicity •MoldingepoxiesmeetUL94V-0 flammabilityclassification Applications •ACmotorspeedcontrol •Uninter | IXYS IXYS Integrated Circuits Division | | | |
HighVoltage,HighGainBIMOSFETMonolithicBipolarMOSTransistor Features •Monolithicfastreversediode •HighBlockingVoltage •JEDECTO-268surfacemountandJEDECTO-247ADpackages •Lowswitchinglosses •Highcurrenthandlingcapability •MOSGateturn-on -drivesimplicity •MoldingepoxiesmeetUL94V-0 flammabilityclassification Appl | IXYS IXYS Integrated Circuits Division | | |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
23+ |
N/A |
78500 |
一级代理放心采购 |
||||
IXYS/艾赛斯 |
21+ROHS |
TO-247 |
12300 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
|||
IXYS(艾赛斯) |
23+ |
N/A |
7500 |
IXYS(艾赛斯)全系列在售 |
|||
IXYS |
2019+ |
TO-268 |
65500 |
原装正品货到付款,价格优势! |
|||
IXYS/艾赛斯场效应管 |
24+23+ |
TO-268 |
12580 |
16年电子元件现货供应商 终端BOM表可配单提供样品 |
|||
IXYS |
22+ |
TO268 |
9000 |
原厂渠道,现货配单 |
|||
IXYS |
1931+ |
N/A |
18 |
加我qq或微信，了解更多详细信息,体验一站式购物 |
|||
IXYS |
22+ |
NA |
18 |
加我QQ或微信咨询更多详细信息, |
|||
IXYS/艾赛斯 |
23+ |
TO268 |
10000 |
公司只做原装正品 |
|||
IXYS/艾赛斯 |
22+ |
TO-247 |
25000 |
只做原装进口现货,专注配单 |
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DdatasheetPDF页码索引
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