封装/外壳：TO-263-3，D²Pak（2 引线 + 接片），TO-263AB 包装：卷带（TR） 描述：DISC IGBT BIMOSFET-HIGH VOLT TO- 分立半导体产品 晶体管 - UGBT、MOSFET - 单

High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor

Features • High Voltage Package • High Blocking Voltage • Anti-Parallel Diode • Low Conduction Losses Advantages • Low Gate Drive Requirement • High Power Density Applications: • Switch-Mode and Resonant-Mode Power Supplies • Uninterruptible Power Supplies (UPS) • Laser Generators • Ca

High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor

Features • High Blocking Voltage • JEDEC TO-268 surface and JEDEC TO-247 AD • Low conduction losses • High current handling capability • MOS Gate turn-on - drive simplicity • Molding epoxies meet UL 94 V-0 flammability classification Applications • AC motor speed control • Uninter

High Voltage, High Gain BIMOSFET Monolithic Bipolar MOS Transistor

Features • Monolithic fast reverse diode • High Blocking Voltage • JEDEC TO-268 surface mount and JEDEC TO-247 AD packages • Low switching losses • High current handling capability • MOS Gate turn-on - drive simplicity • Molding epoxies meet UL94V-0 flammability classification Appl

High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor

Features • High Blocking Voltage • JEDEC TO-268 surface and JEDEC TO-247 AD • Low conduction losses • High current handling capability • MOS Gate turn-on - drive simplicity • Molding epoxies meet UL 94 V-0 flammability classification Applications • AC motor speed control • Uninter

High Voltage, High Gain BIMOSFET Monolithic Bipolar MOS Transistor

Features • Monolithic fast reverse diode • High Blocking Voltage • JEDEC TO-268 surface mount and JEDEC TO-247 AD packages • Low switching losses • High current handling capability • MOS Gate turn-on - drive simplicity • Molding epoxies meet UL94V-0 flammability classification Appl