Integrated Telecom Circuits

Description The Integrated Telecom Circuit combines a 1-Form-A solid state relay, bridge rectifier, Darlington transistor, optocoupler and zener diodes into one 16 pin SOIC package, consolidating designs and reducing component count in telecom applications. The ITC137P’s optocoupler provides for

电信集成电路

The OptoMOS line of multifunction products combines optically-isolated discrete componentfunctions in a single package. Products mix and match SSRs, optocouplers, bridge rectifiers, Darlington transistors and zener diode components to create functional circuits on a single, small package. · Consol;

封装/外壳：16-SOIC（0.295"，7.50mm 宽） 功能：电信电路 包装：托盘 描述：IC TELECOM INTERFACE 16SOIC 集成电路（IC） 电信

Integrated Telecom Circuits

文件：142.9 Kbytes Page：8 Pages

Integrated Telecom Circuits

Description The Integrated Telecom Circuit combines a 1-Form-A solid state relay, bridge rectifier, Darlington transistor, optocoupler and zener diodes into one 16 pin SOIC package, consolidating designs and reducing component count in telecom applications. The ITC137P’s optocoupler provides for

Integrated Telecom Circuits

文件：142.9 Kbytes Page：8 Pages

Integrated Telecom Circuits

文件：142.9 Kbytes Page：8 Pages

封装/外壳：16-SOIC（0.295"，7.50mm 宽） 功能：电信电路 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：IC TELECOM INTERFACE 16SOIC 集成电路（IC） 电信

Plastic Medium Power Silicon NPN Transistor

Plastic Medium Power Silicon NPN Transistor . . . designed for use as audio amplifiers and drivers utilizing complementary or quasi complementary circuits. • DC Current Gain — hFE = 40 (Min) @ IC = 0.15 Adc • BD 135, 137, 139 are complementary with BD 136, 138, 140

N-CHANNEL MOS BROADBAND RF POWER FET

The RF MOSFET Line RF Power Field-Effect Transistor N–Channel Enhancement–Mode . . . designed for wideband large–signal output and driver stages up to 400 MHz range. • Guaranteed 28 Volt, 150 MHz Performance Output Power = 30 Watts Minimum Gain = 13 dB Efficiency — 60 (Typical) •

POWER TRANSISTORS(8.0A,60-100V,70W)

PLASTIC MEDIUM-POWER COMPLEMENTARY SILICON TRANSISTORS 8.0 AMPERE DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS 60-100 VOLTS 70 WATTS

L-BAND SPDT SWITCH

DESCRIPTION The UPG137GV and UPG138GV are L-Band Single Pole Double Throw (SPDT) GaAs MMIC switches developed for digital cellular, PCS, and WLAN applications. These devices feature wide bandwidth, low insertion loss, and high P1dB. The UPG137GV operates on a +3 to +5 V control voltage, while the

L-BAND SPDT SWITCH

DESCRIPTION The UPG137GV and UPG138GV are L-Band Single Pole Double Throw (SPDT) GaAs MMIC switches developed for digital cellular, PCS, and WLAN applications. These devices feature wide bandwidth, low insertion loss, and high P1dB. The UPG137GV operates on a +3 to +5 V control voltage, while the