HIGH CURRENT ISOLATED RECTIFIER ASSEMBLY

文件：236.8 Kbytes Page：6 Pages

HIGH CURRENT ISOLATED RECTIFIER ASSEMBLY

文件：237.26 Kbytes Page：6 Pages

包装：散装 描述：DIODE GEN PURP 400V 15A 分立半导体产品 二极管 - 整流器 - 单

High Current, High Density, Isolated, Silicon Power Rectifiers

N-Channel Enhancement-Mode Vertical DMOS FETs

Features ❏ Low threshold — 1.6V max. ❏ High input impedance ❏ Low input capacitance — 140pF typical ❏ Fast switching speeds ❏ Low on resistance ❏ Free from secondary breakdown ❏ Low input and output leakage ❏ Complementary N- and P-channel devices Applications ❏ Log

N-Channel Enhancement-Mode Vertical DMOS FETs

Features ❏ Low threshold — 1.6V max. ❏ High input impedance ❏ Low input capacitance — 140pF typical ❏ Fast switching speeds ❏ Low on resistance ❏ Free from secondary breakdown ❏ Low input and output leakage ❏ Complementary N- and P-channel devices Applications ❏ Log

P-Channel Enhancement-Mode Vertical DMOS FETs

General Description This low threshold, enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high inpu

P-Channel Enhancement-Mode Vertical DMOS FETs

General Description This low threshold, enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high inpu

SMD Power Inductors

文件：167.94 Kbytes Page：2 Pages