Rad-Hard, 5.0V/3.3V 關-Processor Supervisory Circuits

Rad-Hard, 5.0V/3.3V µ-Processor Supervisory Circuits This family of devices are radiation hardened 5.0V/3.3V supervisory circuits that reducethe complexity required to monitor supply voltages in microprocessor systems. These devices significantly improve accuracy and reliability relative to d

Radiation Hardened, 5.0V/3.3V μ-Processor Supervisory Circuits

Features ▪ Electrically screened to SMD 5962-11213 ▪ QML qualified per MIL-PRF-38535 requirements ▪ Precision supply voltage monitor • 4.65V threshold in the ISL7x5AxH/BxH/CxH • 3.08V threshold in the ISL7x6AxH/BxH/CxH ▪ 200ms (typ) reset pulse width • Active high, active low, and open-drai

Silicon Controlled Rectifiers

Silicon Controlled Rectifiers Reverse Blocking Triode Thyristors . . . PNPN devices designed for high volume, low cost consumer applications such as temperature, light and speed control; process and remote control; and warning systems where reliability of operation is critical. • Small Size • P

SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR

General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. 150.0 Watts Single Ended Package Style AM HIGH EFFICI

SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR

General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. Polyfet process features low feedback and output capacitances resu

GaAlAs Semiconductor Laser

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Silicon MOS IC

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