SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR

General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. 150.0 Watts Single Ended Package Style AM HIGH EFFICI

VDMOS SHORTFORM S1

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SM7055是一款高精度非隔离降压恒压控制芯片，适用于85Vac~265Vac全电压范围应用，内部集成650V高压功率管，内置CS电阻，无需外部补偿元件，即可实现优异的线性调整率和负载调整率，外围元件极少，大大的降低了系统的成本，节约了PCB的尺寸。 •输入电压：85Vac~265Vac\n•拓扑结构支持：低成本BUCK、BUCK-BOOST等方案\n•采用650V单芯片集成工艺\n•待机功耗小于60mW@220Vac\n•集成高压启动电路\n•集成高压功率开关\n•60KHz固定开关频率\n•电流模式PWM控制方式\n•内置抖频技术，提升EMC性能\n•内置过温、过流、过压、欠压等保护功能\n•内置软启动\n•内置智能软驱动技术（提高EMC性能）\n•封装形式： DIP8;

高压电源驱动-非隔离恒压

SM7055-12是一款高精度非隔离降压恒压控制芯片，适用于85Vac~265Vac全电压范围应用；SM7055-12内部集成650V高压功率管，内置CS电阻，无需外部补偿元件，即可实现优异的线性调整率和负载调整率，外围元件极少，大大的降低了系统的成本，节约了PCB的尺寸。 •输入电压：85Vac~265Vac\n•拓扑结构支持：低成本BUCK、BUCK-BOOST等方案\n•采用650V单芯片集成工艺\n•待机功耗小于60mW@220Vac\n•集成高压启动电路\n•集成高压功率开关\n•60KHz固定开关频率\n•电流模式PWM控制方式\n•内置抖频技术，提升EMC性能\n•内置过温、过流、过压、欠压等保护功能\n•内置软启动\n•内置智能软驱动技术（提高EMC性能）\n•封装形式：TO252-2、TO251;

RF POWER VDMOS TRANSISTOR

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SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR

General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. Polyfet process features low feedback and output capacitances resu

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