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型号 功能描述 生产厂家 企业 LOGO 操作
SR705

SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR

General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. Polyfet process features low feedback and output capacitances resu

POLYFET

SCHOTTKY BARRIER RECTIFIER VOLTAGE RANGE 20 to 60 Volts CURRENT 70 Amperes

FEATURES * Low switching noise * Low forward voltage drop * Low thermal resistance * High current capability * High switching capability * High surge capabitity * High reliability

RECTRON

丽正

RF POWER VDMOS TRANSISTOR

文件:60.95 Kbytes Page:2 Pages

POLYFET

Schottky Diodes

RECTRON

丽正

Silicon Controlled Rectifiers

Silicon Controlled Rectifiers Reverse Blocking Triode Thyristors . . . PNPN devices designed for high volume, low cost consumer applications such as temperature, light and speed control; process and remote control; and warning systems where reliability of operation is critical. • Small Size • P

MOTOROLA

摩托罗拉

SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR

General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. 150.0 Watts Single Ended Package Style AM HIGH EFFICI

POLYFET

GaAlAs Semiconductor Laser

文件:40.45 Kbytes Page:2 Pages

PANASONIC

松下

Silicon MOS IC

文件:30.64 Kbytes Page:2 Pages

PANASONIC

松下

SR705产品属性

  • 类型

    描述

  • Forward Current Io:

    70 A

  • Max Surge Current:

    600 A

  • Forward Voltage Vf:

    0.75 V

  • Reverse Current Ir:

    1000 uA

  • Recovery Time:

    N/A

  • Package / Case:

    TO-220

  • Mounting Style:

    Through Hole

更新时间:2026-7-22 17:03:00
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